Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...