SiC Power Devices articles & resources on Made-in-China.com

ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

Dec 5, 2017

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

Kyoto University Professor Hiroyuki Matsunami Awarded Honda Prize for Research on SiC Power Devices

Sep 27, 2017

Honda Foundation (a public-interest incorporated foundation created by Honda Motor Co Ltd’s founder Soichiro Honda and his younger brother Benjiro Honda) says that the Honda Prize 2017 will be awarded to Kyoto University professor ...

Tags: Power Devices

SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019

Sep 27, 2017

“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...

Tags: SiC power, SiC devices

SDK Expanding High-Grade SiC EPI Production Capacity From 3000 to 5000 Wafers Per Month

Sep 18, 2017

Tokyo-based Showa Denko K.K. (SDK) has decided to expand its facilities for producing high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices - which have already been marketed under the trade name High-Grade Epi (HGE) - ...

Tags: SiC power devices, semiconductors

Pallidus Launches M-SiC Silicon Carbide Source Material and Technology Platform

Aug 18, 2017

Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...

Tags: Silicon Carbide, Pallidus

NCSU's Freedm Systems Center Develops Low-Cost SiC High-Voltage Switch

Oct 12, 2016

Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...

Tags: NCSU, Low-Cost SiC High-Voltage Switch

Disco Develops Laser Ingot Slicing Method to Speed Sic Wafer Production and Cut Material Loss

Aug 12, 2016

Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...

Tags: SiC, Disco Corp, laser ingot slicing method

Wide-Bandgap Power Semiconductor Device Market to Grow at 33% Annually to $3.7bn in 2025

Aug 1, 2016

Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...

Tags: Semiconductor, GaN power devices

SiC Power Market Growing at CAGR of 19% to 2021 as It Spreads to More Applications

Jul 26, 2016

When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...

Tags: SiC Power, SiC device

US Air Force Offering $13.5m Cooperative Agreement to Develop Large-Diameter SiC Substrates

Apr 6, 2016

The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...

Tags: SiC Substrates, radio-frequency spectra

GE Aviation Receives $2.1m US Army Contract To Develop SiC Power Electronics

Mar 21, 2016

GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...

Tags: GE Aviation, SiC power devices

Monolith Demonstrating Fast-Switching SiC MOSFETs At APEC

Mar 16, 2016

In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...

Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices

Littelfuse Invests in Silicon Carbide Switch Maker Monolith

Dec 22, 2015

As part of its strategy to move more significantly into power semiconductors for industrial and automotive markets, Littelfuse Inc of Chicago, IL, USA has made an investment in silicon carbide (SiC) diode and MOSFET supplier Monolith ...

Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices, Electrical

Lasertec Launches System for Concurrent Surface and Pl Crystallographic Defect Inspection of SiC Wafers

Sep 29, 2015

Metrology and inspection equipment maker Lasertec Corp of Yokohama, Japan has launched SICA88, the latest model of its SiC wafer inspection and review systems. Featuring both surface and photoluminescence (PL) inspection capabilities, ...

Tags: Lasertec, SiC Wafers

Japan's Rohm Started Mass Production of Silicon Carbide Mosfet

Jun 9, 2015

Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...

Tags: ROHM Semiconductor SiC power MOSFET, Sic Mosfet

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