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SiC Schottky
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ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys
Mar 2, 2018ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...
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Toshiba Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Package
Oct 24, 2017Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in July - has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in ...
Tags: Toshiba, Schottky Barrier, Package
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Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica
Aug 23, 2017Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
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Rohm Expands Full-SiC Power Module Lineup
May 23, 2017Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...
Tags: power modules, Semiconductor
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Monolith Makes Availability 1200V SiC Schottky Engineering Samples
Oct 12, 2016Monolith Semiconductor Inc of Round Rock, TX, USA has announced the availability of engineering samples of 1200V, 5A and 10A silicon carbide (SiC) Schottky diodes in a TO-220 package. Manufactured in the 150mm SiC foundry of X-FAB Texas, ...
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Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
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Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM
Apr 21, 2016In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...
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CISSOID Delivers Prototypes of Three-Phase 1200V/100A SiC MOSFET Intelligent Power Modules to Thales
Apr 19, 2016Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...
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GaN and SiC Power Semiconductor Market to Surpass $1bn in 2020 Then $3.7bn in 2025
Mar 13, 2016Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
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Japan's Rohm Started Mass Production of Silicon Carbide Mosfet
Jun 9, 2015Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
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Tokyo-Based Mitsubishi Electric Corp Has Launched Its Large Hybrid SiC Transfer-Mold Dual
Nov 21, 2014Tokyo-based Mitsubishi Electric Corp has launched its large hybrid silicon carbide (SiC) transfer-mold dual in-line package intelligent power module (DIPIPM), which incorporates a SiC Schottky barrier diode (SBD) and seventh-generation IGBT ...
Tags: hybrid silicon carbide, dual in-line package intelligent power module
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Cree Has Expanded Its Silicon Carbide 1.2 KV Six-Pack Power Module Family
Oct 14, 2014Cree Inc of Durham, NC, USA has expanded its silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module suited for 5-15 kW three-phase applications. Based on Cree’s C2M SiC MOSFET and Z-Rec SiC Schottky ...
Tags: Cree, SiC, Electronics
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Mitsubishi Electric Launched a Transfer-Molded Super-Mini DIPPFC Module
Aug 20, 2014Tokyo-based Mitsubishi Electric Corp has launched a transfer-molded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide (SiC) transistors and diodes that is expected to help reduce the power ...
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Toshiba Corp's Expanded Its Family of 650V Silicon Carbide Schottky Barrier Diodes
Jun 4, 2014Toshiba Corp’s Semiconductor & Storage Products Company has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) with the addition of insulated TO-220F-2L packaged products. Mass production shipment has ...
Tags: Toshiba, Semiconductor, Storage Products
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Microsemi Corp Introduced Its New Silicon Carbide MOSFET Product Family
May 23, 2014Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has introduced its new silicon carbide (SiC) MOSFET product family with new 1200V solutions. The new SiC ...
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