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SiC Substrate
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Two-Dimensional Gallium Nitride with Graphene Encapsulation
Sep 28, 2016Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
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II-VI Purchases Lasertec SICA88 Inspection Analysis Tool for SiC Substrate Manufacturing
Jul 19, 2016II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, has purchased a SICA88 SiC inspection & analysis tool made by the Lasertec Corp of Tokyo, Japan, for ...
Tags: SiC Substrate
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Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor
Jul 5, 2016Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
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Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
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SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics
Oct 19, 2015When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
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Wolfspeed Launches 50V Plastic-Packaged GaN HEMTs for LTE & Radar
Oct 15, 2015Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
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II-VI Inc Dvances Materials Division of Its Performance Products Segment in Pine Brook
Jul 21, 2015II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, ...
Tags: electronics, semiconductor, II-VI, SiC substrates, SiC Wafer
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CREE Introduced a 25W GaN MMIC for 6-12GHz Performance
Mar 16, 2015Cree Inc of Durham, NC, USA has introduced a 25W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) for 6–12GHz performance. Leveraging the inherent benefits of GaN technology, the new MMIC enables extremely wide ...
Tags: integrated circuit, GaN technology
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Silicon Carbide Bipolar Opamp Performance at 500ºC
Aug 2, 2014Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
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China's Nanjing University Produced SiC APDs
Jun 4, 2014China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...
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Dow Corning Corp Introduced a Product Grading Structure for SiC Crystal Quality
May 13, 2014Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...
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Researchers at Ishinomaki Senshu University Have Developed a New Photodiode
Oct 10, 2013Researchers at Japan’s Ishinomaki Senshu University have developed a new photodiode that can detect in just milliseconds high-energy deep-ultraviolet (UVC) light, which is powerful enough to break the bonds of DNA and harm living ...
Tags: Gallium Oxide, Silicon Carbide, UVC Light
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SiC Is Expected to Be Used Increasingly in Power Semiconductors
Mar 13, 2013Mitsubishi Electric Corporation announced this week that it has developed a prototype multi-wire electrical discharge processing technology to cut very hard four inch square polycrystalline silicon carbide (SiC) ingots into 40 pieces at ...
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LEDs Are Projected to Grow More Than Six-Fold to Nearly $100 Billion
Mar 13, 2013LEDs are projected to grow more than six-fold to nearly $100 billion and power conversion electronics to $15 billion over the next decade as the desire for energy efficiency drives adoption, says Lux Research. While the market opportunity ...
Tags: Electrical, Electronics, Lights, LED
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LEDs Are Projected to Grow More Than Six-Fold to Nearly $100bn
Feb 27, 2013LEDs are projected to grow more than six-fold to nearly $100bn and power conversion electronics to $15bn over the next ten years, reckons market analyst firm Lux Research in the report “Winning the Jump Ball: Sorting Winners from ...
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