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SiC device
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Rohm Expands Full-SiC Power Module Lineup
May 23, 2017Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...
Tags: power modules, Semiconductor
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NCSU's Freedm Systems Center Develops Low-Cost SiC High-Voltage Switch
Oct 12, 2016Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...
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SiC Power Market Growing at CAGR of 19% to 2021 as It Spreads to More Applications
Jul 26, 2016When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
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Wolfspeed Launches All-SiC Half-Bridge Power Module & Gate Driver Combination
May 11, 2016In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
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SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics
Oct 19, 2015When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
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Lasertec Launches System for Concurrent Surface and Pl Crystallographic Defect Inspection of SiC Wafers
Sep 29, 2015Metrology and inspection equipment maker Lasertec Corp of Yokohama, Japan has launched SICA88, the latest model of its SiC wafer inspection and review systems. Featuring both surface and photoluminescence (PL) inspection capabilities, ...
Tags: Lasertec, SiC Wafers
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Accel-RF Launches Quantum Smart Fixture for Bench-Top Testing to Speed GaN and SiC Device Development
Sep 23, 2015Accel-RF Instruments Corp of San Diego, CA, USA (which produces turn-key reliability and performance characterization test systems for compound semiconductors) says that it has 'unplugged' the RF SMART Fixture from its automated test ...
Tags: Accel-RF, SMART Fixture, semiconductor
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Silicon Carbide Chip Business Was Worth More Than $133m
Aug 4, 2015According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
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Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon
Jul 27, 2015Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
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II-VI Inc Dvances Materials Division of Its Performance Products Segment in Pine Brook
Jul 21, 2015II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, ...
Tags: electronics, semiconductor, II-VI, SiC substrates, SiC Wafer
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Raytheon UK's Semiconductor Business Unit Has Embarked on a KTP Project
Sep 18, 2014Raytheon UK's semiconductor business unit in Glenrothes, Scotland, UK has embarked on a Knowledge Transfer Partnership (KTP) project, in conjunction with researchers at Newcastle University, to enhance the performance of silicon carbide ...
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Anvil Semiconductors Secured £1m in Funding to Help It Speed The Development
Nov 4, 2013Anvil Semiconductors Ltd of Coventry, UK has secured £1m in funding to help it speed the development and commercialization of its silicon carbide (SiC)-on-silicon technology for power devices. The benefit of SiC-based devices is ...
Tags: SiC power converters SiC-on-silicon driver ICs, Electrical, Electronics
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ITI Has Developed Two Gallium Nitride on Silicon Carbide (GaN-on-SiC) Devices
Jun 5, 2013Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
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The Power Electronics Downturn in 2012 Was Quite Severe
May 29, 2013Starting in late 2011, the power electronics downturn in 2012 was quite severe, exhibiting a 20% drop. The market suffered from the global economic downturn, combined with external factors such as China controlling what happened in some ...
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We Have No Firm Estimate of When It Will Come
May 8, 2013Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
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