SiC power articles & resources on Made-in-China.com

ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

Dec 5, 2017

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

Kyoto University Professor Hiroyuki Matsunami Awarded Honda Prize for Research on SiC Power Devices

Sep 27, 2017

Honda Foundation (a public-interest incorporated foundation created by Honda Motor Co Ltd’s founder Soichiro Honda and his younger brother Benjiro Honda) says that the Honda Prize 2017 will be awarded to Kyoto University professor ...

Tags: Power Devices

SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019

Sep 27, 2017

“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...

Tags: SiC power, SiC devices

Suny Poly Professor Awarded $750, 000 by DOE to Develop More Efficient, Cost-Effective SiC Power Electronics Chips

Sep 26, 2017

State University of New York (SUNY) Polytechnic Institute says that associate professor of nanoengineering Dr Woongje Sung has been selected to receive $750,000 in federal funding from the US Department of Energy (DOE) to develop silicon ...

Tags: Power Electronics Chips, Suny Poly

Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device

Sep 25, 2017

At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...

Tags: Power Device, Mitsubishi, SiC Mosfet

SDK Expanding High-Grade SiC EPI Production Capacity From 3000 to 5000 Wafers Per Month

Sep 18, 2017

Tokyo-based Showa Denko K.K. (SDK) has decided to expand its facilities for producing high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices - which have already been marketed under the trade name High-Grade Epi (HGE) - ...

Tags: SiC power devices, semiconductors

ARPA-E Awards $30m for 21 Projects as Part of Circuits Program

Aug 28, 2017

The US Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E) has announced $30m in funding for 21 projects as part of the CIRCUITS program (‘Creating Innovative and Reliable Circuits Using Inventive Topologies ...

Tags: WBG devices, electronics devices

Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W

Aug 28, 2017

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...

Tags: Wolfspeed, silicon carbide

Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica

Aug 23, 2017

Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...

Tags: Microsemi, chips

Pallidus Launches M-SiC Silicon Carbide Source Material and Technology Platform

Aug 18, 2017

Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...

Tags: Silicon Carbide, Pallidus

Qorvo Makes Available 28GHz RF Products for 5G Base Stations

Jun 1, 2017

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has announced broad commercial availability of four 28GHz RF products for 5G base stations. The firm ...

Tags: Qorvo, GaN, RF Products

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

NCSU's Freedm Systems Center Develops Low-Cost SiC High-Voltage Switch

Oct 12, 2016

Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...

Tags: NCSU, Low-Cost SiC High-Voltage Switch

Wolfspeed Launches First 1000V SiC MOSFET

Oct 12, 2016

Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including MOSFETs, Schottky diodes, and modules — has introduced what it claims is the first 1000V MOSFET, which ...

Tags: Wolfspeed, 1000V SiC MOSFET

ABB's Sic-Based Battery Charger for Trains Shrinks Size Tenfold and Cuts Weight by 80%

Sep 21, 2016

At the InnoTrans trade show in Berlin, Germany (20-23 September), ABB of Zurich, Switzerland is launching a next-generation battery charger based on silicon carbide (SiC) power semiconductors for use in all rail applications. Train ...

Tags: ABB, InnoTrans trade show in Berlin, Sic-based battery charger

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