SiC substrates articles & resources on Made-in-China.com

II-VI Purchases Lasertec SICA88 Inspection Analysis Tool for SiC Substrate Manufacturing

Jul 19, 2016

II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, has purchased a SICA88 SiC inspection & analysis tool made by the Lasertec Corp of Tokyo, Japan, for ...

Tags: SiC Substrate

US Air Force Offering $13.5m Cooperative Agreement to Develop Large-Diameter SiC Substrates

Apr 6, 2016

The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...

Tags: SiC Substrates, radio-frequency spectra

X-FAB Offers High-Volume 6-Inch SiC Foundry Production

Mar 15, 2016

X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...

Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices

Laytec Expands Epinet Library's High-Temperature Nk Database and Real-Time Analysis for GaN/Sic-4h HEMTs

Dec 3, 2015

AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...

Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

Cree Co-founder on RF and Power Business New Brand Identity and Market Trends

Oct 14, 2015

Leading U.S. LED manufacturer Cree announced earlier this month, it will be rebranding its power and RF business as Wolfspeed. In an exclusive interview with LEDinside analyst and assistant manager Joanne Wu, Cree co-founder and CTO John ...

Tags: Cree, Wolfspeed, RF and power business, Market Branding

Demand for Larger Diameters to Boost GaN Substrate Market From $2.2bn in 2014 to $4bn by 2020

Sep 14, 2015

The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...

Tags: Diameters, GaN Substrate Market

II-VI Inc Dvances Materials Division of Its Performance Products Segment in Pine Brook

Jul 21, 2015

II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, ...

Tags: electronics, semiconductor, II-VI, SiC substrates, SiC Wafer

GaN-on-Si Will Dominate The Gan Market for at Least The Next Decade

Jan 16, 2015

Since gallium nitride (GaN) materials can create much more efficient devices for electric power conversion in devices from cell phone chargers to hybrid electric vehicles, the market for GaN discrete components will grow to $1.1bn in 2024, ...

Tags: Gan Power, hybrid electric vehicles, Electrical

Germany Developed GaN HEMTs on Sic Layers on Silicon Wafers

Jan 5, 2015

Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...

Tags: Cubic Silicon Carbide, Electrical

Japanese Manufacturer Showa Denko Qualify Its Most Recent System for Manufacturing Sic

Oct 31, 2014

Deposition equipment maker Aixtron SE of Aachen, Germany says that Japanese manufacturer Showa Denko has qualified its most recent system for manufacturing silicon carbide (SiC) epitaxial wafers. The new AIX G5 WW (Warm-Wall) chemical vapor ...

Tags: SiC Production, Deposition equipment

SaveMoneyCutCarbon Has Announced a New Partnership as Master Distributor

Aug 27, 2014

UK full-service energy-efficiency specialist SaveMoneyCutCarbon.com has announced a new partnership as Master Distributor for Soraa Inc of Fremont, CA, USA and its GaN-on-GaN (gallium nitride on gallium nitride) technology, which provides ...

Tags: Soraa, Distributor, Electrical

MANGA Has Succeeded in Implementing a Supply Chain for The Realization of Power Electronic

Jul 10, 2014

Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...

Tags: GaN Technologies, HEMT structures, electronics components

German Project NeuLand Developed Highly Integrated Components and Electronic Circuits

Jul 10, 2014

Directed by Infineon Technologies AG together with partners Aixtron, SiCrystal AG and SMA Solar Technology AG, the three-year German project NeuLand (begun in late 2010) has developed highly integrated components and electronic circuits ...

Tags: Power electronics GaN-on-Si SiC

Dow Corning Corp Introduced a Product Grading Structure for SiC Crystal Quality

May 13, 2014

Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...

Tags: Dow Corning SiC substrates, Electrical, Electronics

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