New 1W GaN-on-Si LEDs break the 100 lm/W level in warm white with Toshiba stating that volume production will begin in November 2013. Toshiba Electronics Europe has announced a second-generation of the company's high-power ...
Tags: Toshiba, Silicon-Based LEDs
Plessey's first silicon-based LEDs are relatively-low-output designs targeting the indicator and control-panel-backlight market, but the company says it will quickly deliver LEDs for general-lighting applications. Plessey has announced ...
Epistar and Azzurro have jointly made breakthroughs on developing GaN-on-silicon based LEDs utilising Epistar's HB LED structures and Azzurro's technology for 150mm GaN-on-silicon in just 4 months. The firms transferred Epistar's existing ...
Tags: LED, GaN-on-silicon
The next technological challenge for the Solid-state lighting industry is the transition to silicon wafers. Everybody knows that silicon offers many advantages in terms of cost and availability. Nevertheless, the changeover bears many ...
Tags: LED
Toshiba plans silicon-based LED production; Azzurro installs Veeco MOCVD 31 Jul 2012 Veeco Instruments announced that Azzurro Semiconductors has commissioned a new Veeco MOCVD reactor for silicon-based LED production while Toshiba plans to ...
Azzurro receives EUR 2.6 million grant for GaN-on-Si LED wafer development 24 Jul 2012 The European Regional Development Fund and the Free State of Saxony award EUR 2.6 million to Azzurro Semiconductors for gallium-nitride-on-silicon wafer ...
Using Gallium Nitride on 8-in Silicon wafers, Bridgelux is achieving LED efficacy in the lab on par with LEDs produced on sapphire or silicon carbide wafers. Bridgelux announced that it has fabricated LEDs in the lab using ...
Tags: market view, led