VDS articles & resources on Made-in-China.com

How to Design Energy-Saving Indoor LED Display Screen

Nov 23, 2015

Now, with the energy conservation, the environmental protection of the word was on the agenda, people about life concept also a shift in recent years has LED to rapid industry requirements and keep pace with The Times. In the energy ...

Tags: LED Display Screen, Indoor Display, Chipshow

IBM Developed a Process for Growing Compound Semiconductor Crystals

Jun 12, 2015

A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...

Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM

Skysilicon Released The GaN Power Device Manufactured on an 8-Inch Substrate

Mar 6, 2015

Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...

Tags: GaN-on-Si MISHEMTs, Electronics

CREE Introduced a New Mosfet Design Kit

Jan 8, 2015

Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) power devices, has introduced a new MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable ...

Tags: configurable half-bridge circuit, MOSFET design, Electrical

Germany Developed GaN HEMTs on Sic Layers on Silicon Wafers

Jan 5, 2015

Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...

Tags: Cubic Silicon Carbide, Electrical

EPA and USDA Working Together to Implement and Coordinate Policies On Water Quality

Dec 17, 2014

U.S. Environmental Protection Agency (EPA) Administrator Gina McCarthy today joined U.S. Department of Agriculture Secretary (USDA) Tom Vilsack, Mike Boots of the White House Council on Environmental Quality (CEQ), Commonwealth of Virginia ...

Tags: Water Quality, Agriculture

NTT Released GAN HEMTs From Sapphire Substrate to Thermally Conducting Copper

Dec 4, 2014

NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...

Tags: Boron Nitride, GaN Transistors

Mr. Zhongyu Shi Experienced The Unnerving When Driving a Brand New Volvo Trucks FM460

Nov 28, 2014

Recently, Mr. Zhongyu Shi was driving a brand new Volvo Trucks FM460, one of the vehicles in the Anhui Liu An Logistics fleet, down the Outer Ring of Qipu Road in Shanghai at nearly 100 km/hour, with a total weight of 55 tons of the truck ...

Tags: Safe Transportation, Trucks Dynamic Steering System, Transportation

Arnott's Reman Front Oe Air Struts Fit Land Rover's Range Rover L322

Sep 11, 2014

Arnott's reman front OE air struts fit Land Rover's Range Rover L322. Arnott Air Suspension Products has introduced remanufactured front OE air struts for the 2010 to 2012 Land Rover Range Rover L322 with variable damping suspension ...

Tags: Auto Parts

Volvo Trucks Is Launching I-Shift Dual Clutch

Sep 9, 2014

Volvo Trucks is now launching I-Shift Dual Clutch, the first transmission on the market with a dual clutch system for heavy vehicles. Thanks to power-shift gear changes without any interruption in power delivery, torque is maintained and ...

Tags: Volvo Truck, Gearbox, Heavy Vehicles

High-Frequency Performance of Gallium Nitride Gan Has Been Reported in Singapore

Sep 5, 2014

Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...

Tags: Electrical, Electronics

Higher Breakdown Voltage for FP GaN HEMTs Over Convention Field-Plate Designs

Sep 3, 2014

Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...

Tags: GaN, HEMTs, Electronics

Home Textiles Market Will Welcome a Variety of Design-Driven Bed, Bath and Linen Vendors

Aug 12, 2014

Home Textiles Market Week in New York will welcome a variety of fashion-forward and design-driven bed, bath and linen vendors to the upcoming summer 2014 market, August 16-20, 2014, at NY NOW, the Market for Home Lifestyle (formerly NYIGF) ...

Tags: NY, Fashion-Forward, Textile

Passivating Nitride Transistors Without Vacuum Processing

Aug 11, 2014

Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...

Tags: Electrical, Electronics, Transistor

Delivery of Volvo Trucks New Range in China Market

Jul 1, 2014

June 29th, 2014, Chengdu - Volvo Trucks New FH/FM Product Experience visited Chengdu after the trips of Beijing and Shanghai. At the same time, the 2014 Volvo Trucks Fuelwatch Competition West China Semi-final also concluded in Chengdu ...

Tags: Volvo, Truck

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