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ROHM Shrinks Two-Color Chip LED by 35% Into 1608-Size Form Factor

Aug 28, 2017

ROHM Semiconductor of Kyoto, Japan has launched what it claims is the industry’s smallest class (1608 size) of two-color chip LEDs. The SML-D22MUW also features a special design that is said to improve reliability along with a ...

Tags: LED, displays

Nissan Agrees to Sell Electric Battery Business to GSR Capital

Aug 10, 2017

Japanese automaker Nissan has agreed to sell its electric battery business to GSR Capital, a Chinese investment firm, for an undisclosed amount. As per the agreement, Nissan will be selling its battery subsidiary Automotive Energy Supply ...

Tags: Nissan, Electric Battery

HUAWEI Said The New Graphene Battery Performance Spike Market Most of The Lithium Battery

Dec 12, 2016

Graphene battery is the bubble it Since October 23, 2015, HUAWEI and the United Kingdom, University of Manchester to achieve graphene application research project, we look forward to HUAWEI launched the subversive results, but who are ...

Tags: battery, HUAWEI, graphene

DONGFENG Optimum New Energy Auto Project Settled Down in Hohhot

Aug 26, 2016

Recently, Hohhot City Government, DONGFENG and Optimum signed industrial cooperation-frame agreement in Shiyan Hubei. The first batch of 10000 DONGFENG Optimum new energy light trucks will be manufactured in Hohhot. So far there have been ...

Tags: DONGFENG, Hohhot, industrial cooperation-frame agreement

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Apr 29, 2016

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

Indium Gallium Arsenide MOSFET Used as Radio-Frequency Switch

Mar 30, 2016

Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...

Tags: InGaAs MOSFET RF switch

Higer Dragonway Pickup Helps You Realize Your Dream

Mar 22, 2016

Dragonway pickup has several series includes standardized version, classic version and van truck, etc.. It has been favored by customers since its on-sale in market. It is said that Dragonway pickup has three exclusive advantages ...

Tags: Dragonway pickup, Van truck, Standard version, Classic version

Toward Quantum Computing on Silicon-on-Insulator Platform

Feb 6, 2016

Researchers in France believe they have made preliminary steps towards establishing a silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) platform for quantum information processing. Quantum information processing ...

Tags: SOI substrates, Silicon-on-Insulator

Low-Threshold Yellow Laser Diodes

Dec 21, 2015

Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...

Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Dec 2, 2015

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

II-VI Semiconductor Green Laser Diode Achieves Lower Current Threshold

Nov 9, 2015

Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...

Tags: laser diodes, zirconium dioxide

Claiming Record 4.7kv Breakdown for Gallium Nitride P-N Diodes

Oct 15, 2015

Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...

Tags: GaN p-n diodes, GaN Free-standing, GaN substrates

The Fraunhofer Institute Tests Graphene as An Alternative for Transparent Electrode for OLEDs

Oct 14, 2015

The Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP will show for the first time organic light emitting diodes (OLEDs) on graphene at Plastic Electronics 2015 (6th − 8th of October ...

Tags: OLED, sgraphene, The Fraunhofer Institute, transparent electrode

Designer Integrates Sex Science in LED Badge Design at Burning Man this Year

Oct 14, 2015

This LED badge launched at Burning Man this year has an OLED touch screen was designed by applying reproductive science and genetics. The personified light badges “inherit” a particular lighting sequence that can be passed on to ...

Tags: LED lighting design, Burning Man, LED badge

Forward-Bias Gate Breakdown in HEMTs with Enhancement-Mode P-Gan Gate

Sep 14, 2015

Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...

Tags: P-Gan Gate, Electronics

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