Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
Driven mainly by heat spreaders for high-power device thermal management, the diamond materials market for semiconductor devices will rise at a compound annual growth rate (CAGR) of 14% to more than $43m in 2020, according to the base ...
Tags: Semiconductors, Diamond Materials