Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...
Tags: semiconductor, MOCVD
Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...
Tags: Kyma technologies, GaN, Quora
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor
Researchers at Japan’s Ishinomaki Senshu University have developed a new photodiode that can detect in just milliseconds high-energy deep-ultraviolet (UVC) light, which is powerful enough to break the bonds of DNA and harm living ...
Tags: Gallium Oxide, Silicon Carbide, UVC Light
The LED consists of (1) a blue LED chip made on a β-type Ga2O3 substrate by using GaN-based semiconductor and (2) a fluorescent material. Compared with a case where a common blue LED chip formed on a sapphire substrate is used, the new ...
Japanese companies from Tamura Corp and Koha Co Ltd have created a white LED using gallium oxide (β-type Ga2O3) and exhibited it at Lighting Japan 2013 from Jan 16 to 18, 2013. The LED consists of a blue LED chip made on a ...
Tags: Japanese companies, LED, gallium oxide