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heterostructures
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EpiGan Showcasing GaN Epiwafer Solutions for 5G
Aug 31, 2018In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...
Tags: GaN Epiwafer, epitaxial wafer
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Two-Dimensional Gallium Nitride with Graphene Encapsulation
Sep 28, 2016Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
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Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate
Sep 9, 2016Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
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Hexagonal Boron Nitride Enables Cost-Effective, Compact Solid-State Detection of Neutron Signals
Aug 19, 2016A group of Texas Tech University researchers led by professors Hongxing Jiang and Jingyu Lin has developed hexagonal boron nitride semiconductor as a possible low-cost alternative to helium gas detectors in neutron detection ('Realization ...
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Relaxing Multiple Quantum Wells with Low-Temperature Barriers
Jul 27, 2016South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
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Correcting Charge Polarization Calculations for III-Nitrides
Jul 7, 2016Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
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Epigan's Production Facility Certified as Compliant to ISO9001: 2015
Jun 30, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...
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Speed up for Indium Gallium Nitride Two-Dimensional Electron Gas
Jun 20, 2016Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
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ORNL-Led Group Grows Aligned Monolayers of Lattice-Mismatched Semiconductors
Apr 21, 2016Led by the Department of Energy's Oak Ridge National Laboratory (ORNL), a group of researchers has synthesized a stack of atomically thin monolayers of two lattice-mismatched semiconductors (Xufan Li et al, 'Two-dimensional GaSe/MoSe2 ...
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Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics
Apr 15, 2016Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
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Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates
Apr 6, 2016Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
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Indium Gallium Nitride Barriers Enhance LED Power And Efficiency
Mar 15, 2016South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...
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Vertical Epitaxial Heterostructure GaAs Optical Transducers
Mar 9, 2016Researchers in Canada claim the highest reported optical-to-electric power conversion of more than 65% (Figure 1) for a 150W/cm2 (~1500 suns) tuned narrow spectrum input from high-powered laser diodes [S. Fafard et al, Appl. Phys. Lett., ...
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Tantalum Barrier Reduces Gallium Phosphide Contact Resistance
Mar 9, 2016Korea University has been working to improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn. J. Appl. Phys., vol55, p032102, 2016]. In particular, the research team added ...
Tags: AlGalnP, Tantalum barrier, LED
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Low-Threshold Yellow Laser Diodes
Dec 21, 2015Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...
Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics