power conversion devices articles & resources on Made-in-China.com

VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver

Sep 20, 2016

At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...

Tags: ECCE2016, VisIC Technologies, MISHEMTs

VisIC Launches Low-Rds(on) 650v GaN Switch Product Line in Bottom-Side-Cooled Package for Switching up to 12A

Sep 9, 2016

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new ...

Tags: VisIC, MISHEMTs, new 650V GaN power switch

VisIC Launches New Generation of Low-Rdson ALL-Switch 650v GaN Devices Usable with Standard Drivers

Jun 7, 2016

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the ...

Tags: GaN-on-Si, power transistor

VisIc Launches 650V Half-Bridge Evaluation Board

Apr 15, 2016

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...

Tags: GaN-on-Si power transistor

VisiC Unveiled The Lowest-Resistance 650V Blocking Voltage Transistor

Jun 29, 2015

VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metail-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has unveiled what it ...

Tags: GaN-on-Si, power transistor

Transphorm Is Offering Engineering Samples of Its TPS3205WS Transistor

Mar 24, 2015

At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...

Tags: Transphorm, APEC, Electronics

Transphorm Announced The Introduction of Two Co-Branded 600v GaN Cascode Transistors

Mar 17, 2015

At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...

Tags: APEC 2015, GaN Power Devices

GaN-on-Si Will Dominate The Gan Market for at Least The Next Decade

Jan 16, 2015

Since gallium nitride (GaN) materials can create much more efficient devices for electric power conversion in devices from cell phone chargers to hybrid electric vehicles, the market for GaN discrete components will grow to $1.1bn in 2024, ...

Tags: Gan Power, hybrid electric vehicles, Electrical

Transphorm Inc of Goleta Is Partnering with TPS of Bangalore

Aug 27, 2014

Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and provides gallium nitride (GaN)-based power conversion devices and modules for power supplies and adapters, motor drives, solar inverters and electric vehicles, is ...

Tags: Transphorm, Partner, Electrical

Transphorm Inc Obtained a Sole Worldwide License

May 14, 2014

Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has obtained a sole worldwide license to Furukawa Electric Co Ltd's extensive gallium nitride (GaN) power device ...

Tags: Transphorm GaN-on-Si GaN HEMT, power conversion devices, power modules

Transphorm Will Give Two Presentations on 20 March

Mar 5, 2014

At last year’s IEEE Applied Power Electronics Conference & Exposition (APEC), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) introduced the first - and only - ...

Tags: Transphorm GaN-on-Si, Electrical

$27 Million in Funding From Arpa-E Was Announced by Cheryl Martin

Oct 24, 2013

ARPA-E Deputy Director Cheryl Martin today announced $27 million in funding from the Energy Department’s Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices ...

Tags: Transformational Grid Technologies

Cheryl Martin Has Announced $27m in Funding

Oct 22, 2013

ARPA-E deputy director Cheryl Martin has announced $27m in funding from the US Department of Energy's (DOE) Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices that ...

Tags: Electrical, Electronics

CREE Licenses Gan Device Patents License Agreement with Transphorm

Aug 6, 2013

, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree's extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN ...

Tags: Cree GaN HEMT, Lights, Lighting

Cree Has Signed a Non-Exclusive Worldwide Patent License Agreement with Transphorm

Aug 5, 2013

Cree Inc of Durham, NC, USA has signed a non-exclusive worldwide patent license agreement with Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) that provides access to ...

Tags: Transphorm Cree, Electrical, Electronics

power conversion devices

Related Products