power loss articles & resources on Made-in-China.com

Osram Boosts Efficiency of Green LEDs by 40%

May 18, 2018

Osram Opto Semiconductors GmbH of Regensburg, Germany has succeeded in reducing the typical forward voltage by about 600mV to 2.6V (at a power density of 45A/cm2) in its indium gallium nitride (InGaN)-based green direct-emitting LEDs. With ...

Tags: Osram, Green LEDs

ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys

Mar 2, 2018

ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...

Tags: sensors, analog

Beryllium Doping of Gallium Nitride Shown to Offer Promise for Higher Efficiency in Power Electronics

Nov 15, 2017

Working with scientists in Texas and Warsaw, researchers at Finland’s Aalto University have made a breakthrough in revising methods largely discarded 15 years ago (‘Amphoteric Be in GaN: Experimental Evidence for Switching ...

Tags: GaN Power electronics

Kyoto University Professor Hiroyuki Matsunami Awarded Honda Prize for Research on SiC Power Devices

Sep 27, 2017

Honda Foundation (a public-interest incorporated foundation created by Honda Motor Co Ltd’s founder Soichiro Honda and his younger brother Benjiro Honda) says that the Honda Prize 2017 will be awarded to Kyoto University professor ...

Tags: Power Devices

Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device

Sep 25, 2017

At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...

Tags: Power Device, Mitsubishi, SiC Mosfet

TI Launches High-Voltage, Three-Phase High-PWM-Frequency GaN Inverter Reference Design for 200V AC Servo Drives and Robotics

Jun 29, 2017

Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...

Tags: GaN Inverter, AC Servo Drives

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

Jul 27, 2016

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

New ETS-20 From IOTA Delivers Enhanced Control And Energy Savings For Emergency Fixtures

Mar 21, 2016

IOTA is proud to announce the release of the ETS-20 and ETS-20-DR Emergency Lighting Control Device...allowing for the of use wall switches or other control devices, such as a timer or occupancy sensor, on designated emergency fixtures ...

Tags: IOTA, ETS-20, ETS-20-DR, Emergency Lighting Control Devices

EVG Sees Power Device and RF Applications Driving Demand for Wafer Bonding Solutions for Engineered Substrates

Dec 21, 2015

EV Group of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) says that over the past year it has seen a significant increase in demand for its wafer bonding ...

Tags: EV Group Engineered substrates Power electronics

FCA Recalls 16, 114 Full-Size Vans

Dec 3, 2015

FCA is voluntarily recalling an estimated 16,114 full-size vans in the U.S. to repair their ignition contacts. An FCA US investigation has confirmed some vans may have been inadvertently equipped with ignition components that are subject ...

Tags: FCA, vans, ignition-switch

Toshiba Unveils SOI-CMOS Process Claiming Lowest-Class Insertion Loss for RF Switches in Smartphones

Nov 24, 2015

Toshiba has announced the development of the next-generation TarfSOI (Toshiba advanced RF silicon-on-insulator) process, optimized for radio-frequency (RF) switch applications. Sample shipments of a new SP12T (single-pole 12-throw switch) ...

Tags: Toshiba, SOI-CMOS, RF switches

How to Design Energy-Saving Indoor LED Display Screen

Nov 23, 2015

Now, with the energy conservation, the environmental protection of the word was on the agenda, people about life concept also a shift in recent years has LED to rapid industry requirements and keep pace with The Times. In the energy ...

Tags: LED Display Screen, Indoor Display, Chipshow

Osram Launches High Lumen SMT LEDs

Oct 14, 2015

Osram Opto Semiconductors is unveiling an LED prototype in surface mount technology (SMT) with a brightness of up to 2000 lumen (lm) at ISAL 2015 – the Oslon Black Flat S. Experts achieved this high output by combining five chips from ...

Tags: Osram, High Lumen LEDs, SMT LEDs

Osram Opto Unveils Oslon Black Flat S LED Prototype, Providing up to 2000lm for Automotive Applications

Sep 29, 2015

At the International Symposium on Automotive Lighting (ISAL 2015) in Darmstadt, Germany (29–30 September), Osram Opto Semiconductors GmbH of Regensburg, Germany is unveiling the Oslon Black Flat S, a surface-mount technology (SMT) LED ...

Tags: Osram Oslon, LED, Semiconductors, headlamps

Japan's Rohm Started Mass Production of Silicon Carbide Mosfet

Jun 9, 2015

Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...

Tags: ROHM Semiconductor SiC power MOSFET, Sic Mosfet

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