Toshiba has started volume production of silicon carbide (SiC) power devices at Himeji in the Hyogo Prefecture in anticipation of growing demand for industrial and automotive applications.
Toshiba will manufacture Schottky Barrier Diodes (SBD) as the first of its new line-up of SiC products.
Source:
http://www.electronicsweekly.com/Articles/2013/04/11/55918/toshiba-goes-sic.htm
