Trade Resources Company News RF Micro Devices Has Launched The RFPA1012 Linear Power Amplifier Power Amplifier

RF Micro Devices Has Launched The RFPA1012 Linear Power Amplifier Power Amplifier

Tags: RFMD, GaAs, HBT, Wireless

RF Micro Devices Inc of Greensboro,NC,USA has launched the RFPA1012 linear power amplifier,designed specifically for wireless infrastructure applications.

Using a gallium arsenide(GaAs)heterojunction bipolar transistor(HBT)fabrication process,the single-stage amplifier operates on low DC power(5V,90mA),and has high linearity(OIP3=44dBm at 900MHz).It also achieves a high IP3/DC power ratio that operates over a broad frequency range of 400-2700MHz.

The linear PA also offers a low noise figure(NF=3.5dB at 900MHz),suiting second-and third-stage low-noise amplifiers(LNAs).Other applications include GaAs pre-drivers for base-station amplifiers,and Class AB operation for DCS,PCS,UMTS and WiFi transceiver applications.

The RFPA1012 is currently available in production quantities.Pricing begins at$2.76 each in 100-unit quantities.

Source: http://www.semiconductor-today.com/news_items/2012/JUNE/RFMD_120612.html
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RFMD Launches 400-2700mhz GaAs HBT Linear PA for Wireless Infrastructure