At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010 - is launching a family of high-voltage GaN devices for switching power electronics designs.
With a 1200V rating, the GaN modules have typical on-resistance (R DS(ON)) down to just 0.04Ω. Target applications are power converters for motor drives, three-phase power supplies and other applications requiring current switching up to 50A (current limit at the first line of products).
The GaN devices are based on VisIC's ALL Switch (Advanced Low Loss Switch) second-generation HEMT technology, which combines high levels of cell integration with optimized cell design, says chief technology officer Gregory Bunin. "This technology supports reduced gate charge and capacitances without losing the benefits of low RDS(ON), with our GaN devices offering an ultra-low maximum switching energy down to 140μJ," he adds.
Switching losses are 3-5 times lower compared to SIC MOSFETs counterparts, it is reckoned. The isolated gate driver is integrated in an isolated DIP power package.
The new GaN devices represent high-voltage supplements to VisIC's existing ALL Switch line-up of 650V GaN devices.