Trade Resources Industry Views Hittite Microwave Launched Four New Gallium Nitride MMIC Power Amplifier Products

Hittite Microwave Launched Four New Gallium Nitride MMIC Power Amplifier Products

Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched four new gallium nitride (GaN) MMIC power amplifier products that offer performance, size and durability advantages for communications, test instrumentation and radar systems operating in the 2-20GHz frequency range.

The HMC1086F10 is a 25W GaN MMIC power amplifier that operates at 2-6GHz, and is provided in a 10-lead flange-mount package. The amplifier typically provides 23dB of small-signal gain, +44dBm saturated output power, and delivers +46dBm output IP3 at +33dBm output power per tone. The amplifier draws 1100mA quiescent current from a +28V DC supply. The HMC1086 is the die version of the HMC1086F10. This 25W GaN MMIC power amplifier also operates at 2-6GHz and provides 22dB of small-signal gain, +44dBm of saturated output power, and +48dBm output IP3 at +33dBm output power per tone. Both feature RF I/Os that are DC blocked and matched to 50 Ohms for ease of use.

The HMC1087F10 is an 8W GaN MMIC power amplifier that operates at 2-20GHz, and is provided in a 10-lead flange-mount package. The amplifier typically provides 11dB of small-signal gain, +39dBm of saturated output power, and +43dBm output IP3 at +28dBm output power per tone. The amplifier draws 850mA quiescent current from a +28V DC supply. The HMC1087 is the die version of the HMC1087F10. This 8W GaN MMIC power amplifier also operates at 2-20GHz and provides 11dB of small-signal gain, +39dBm of saturated output power, and +45dBm output IP3 at +29dBm output power per tone. Both feature RF I/Os that are matched to 50 Ohms.

Both the HMC1086 and the HMC1087 have compact die sizes, high-output-power capability and simplified biasing, making them suitable for integration into high-power-density multi-chip module (MCM) and subsystem applications.

All four GaN MMIC power amplifiers complement Hittite's line of microwave power amplifiers, which provide continuous frequency coverage of 0.01-86GHz.

Source: http://www.semiconductor-today.com/news_items/2013/JUL/HITTITE_110713.html
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Hittite Launches Gan Mmic Power Amplifiers Delivering 25W at 2-6GHz and 8W at 2-20GHz