Trade Resources Industry Views Veeco Wins First MBE R&D System Order From Chinese University

Veeco Wins First MBE R&D System Order From Chinese University

Tags: MBE, GENxplor, Veeco

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received the first order from a Chinese customer for its GENxplor R&D molecular beam epitaxy (MBE) system. Nanjing University is scheduled to receive the system in second-quarter 2016. The GENxplor system is said to be the top-selling MBE system worldwide since its introduction in August 2013.

Nanjing University purchased the system as an addition to its Materials Science and Engineering research program, led by professor Dr Hong Lu. The system will enable the epitaxial growth of III-V semiconductor materials for applications including optoelectronic devices and thermoelectric energy conversion.

"The open-architecture design and superior technology of the GENxplor system is a welcome addition to the research facility of National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences at Nanjing University," says Lu. 

The GENxplor system deposits epilayers on substrates up to 3" in diameter and is used for a wide variety of applications such as developing high-speed transistors, fiber lasers for material processing, and wireless technology. Veeco says that its efficient single-frame design combines all vacuum hardware with on-board electronics to make it up to 40% smaller than other MBE systems, saving lab space.

"The endorsement from Nanjing University and Dr Lu firmly reinforces GENxplor as the leading R&D MBE system in the industry," says Gerry Blumenstock, VP of Veeco's MBE Operations. "After launching the system at the 2013 China MBE Conference, we are excited that Nanjing University, a leading materials science and condensed matter physics research university, is the first customer to install a GENxplor in China."

Source: http://www.semiconductor-today.com/news_items/2016/jun/veeco_140616.shtml
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