At the SPIE Photonics West 2014 conference in San Francisco (3-6 February), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK is presenting a series of invited papers on recent developments in photonic technologies:
‘Growth and characterization of 6” InSb substrates for use in large-area infrared imaging applications’ announces what is claimed to be an industry first; commercial 6”-diameter indium antimonide suitable for use in the fabrication of mid-wave infrared (MWIR) focal-plane IR detectors:
In addition, IQE’s Infrared division is presenting a further two invited papers:
‘GaSb-based photodetectors covering short-wave to long-wave IR grown by molecular beam epitaxy’, covering the MBE growth of gallium antimonide-based photodetector structures spanning the short-wave to long-wave IR spectral range - barrier-type ‘nBn’ detectors, grown on 4-inch GaSb or 6-inch GaAs substrates. ‘Multi-wafer growth of GaInAs photodetectors on 4” InP by MOCVD for SWIR imaging applications’ covers the growth of indium phosphide/indium gallium arsenide photodetectors on 4-inch indium phosphide by metal-organic chemical vapour deposition.
See related items:
IQE launches dedicated infrared products division
IQE acquires antimony-based substrate maker Galaxy