Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2040 power transistor, an extremely small, fast-switching GaN power transistor that enables superior resolution, faster response time, and greater accuracy for high-speed end-use applications.
High stability of the threshold over temperature ensures the high stability as the laser heats up. For example, the product is suitable for pulsed laser drivers used in LiDAR technology (the technology at the heart of 3D sensing in augmented reality platforms as well as collision avoidance and guidance systems in autonomous vehicles). The end result of the EPC2040's performance is increased accuracy and higher resolution in these systems.
The low temperature coefficient of the gate threshold of the EPC2040 eGaN FET contributes to enhanced end-use system performance. This feature gives consistent results, enabling lower laser diode power and high-quality system operation over its entire operating temperature range, says EPC.
Benefits of using eGaN FETs in augmented reality systems include lower laser diode heat resulting from narrower pulse widths, high efficiency due to lower laser diode driver heat, more compact systems because of the small eGaN FET footprint, and consistent operation because the EPC2040 is stable with temperature.
"The EPC2040 was designed specifically for applications requiring high-frequency, narrow-pulse-width capabilities," notes Steve Colino, VP strategic technical sales. "These are the requirements that are critical to improving resolution in LiDAR."
Pricing for the EPC2040 is $0.65 each in 1000-unit quantities.
