Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that Dr John Glaser has joined its engineering team as director, Applications Engineering.
Glaser's focus will be on designing lower-loss and higher-power-density benchmark architectures and converters - initially in high-voltage applications -that demonstrate the benefits of using GaN transistors. Glaser's research and practical experience in these applications will be shared with customers to accelerate customer designs using eGaN FETs. His designs will aim to demonstrate GaN transistors' superior performance over MOSFETs.
Glaser has a doctorate in electrical engineering as well as a master's degree from the University of Arizona, and an undergraduate degree from the University of Illinois, Urbana-Champaign (UIUC). Prior to joining EPC he was a senior engineer at the General Electric Global Research Center for over 16 years, where he served in technical and project leadership roles for power processing projects, including energy-efficient lighting, RF power sources, silicon carbide (SiC) semiconductor applications, advanced magnetic component modeling and design, appliance controls, radar power supplies, aircraft power, failure analysis and correction. Glaser has also served as an adjunct professor teaching power electronics at Rensselaer Polytechnic Institute (RPI) in Troy, NY.
EPC says that Glaser joins a team of application engineers that has demonstrated not only direct support of customers' adoption of eGaN power transistors but has also contributed to the rapidly expanding bibliography of technical literature on GaN technology, as evidenced by technical articles and presentations including the upcoming publication by Wiley of the team's second edition of the textbook 'Gallium Nitride for Efficient Power Conversion'.
