Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2027, a 450V normally off (enhancement-mode) power transistor capable of rise times of 4ns for applications requiring high-frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high-voltage, higher switching speeds include ultra-high-frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting.
The EPC2027 has a voltage rating of 450V and maximum on-resistance (RDS(on)) of 400mΩ with a 4A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2027 measures 1.95mm x 1.95mm for increased power density.
“As off-line adapters and inverters increasingly push toward smaller size, less weight, and higher power density, the demand for corresponding higher voltage and faster switching speeds is increasing,” says co-founder & CEO Alex Lidow. “The 450 V EPC2027 allows power designers to increase the switching frequency of their off-line power conversion systems for increased efficiency and smaller footprint,” he adds.
The EPC9044 development board, featuring the EPC2027, is in a half bridge configuration with on board gate driver, gate drive supply and bypass capacitors. The 2” x 1.5” board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the EPC2027 eGaN FET.
The EPC2027 eGaN FETs are priced at $5.81 each in 1000-unit quantities. The EPC9044 development boards are priced at $137.75 each.
