MALVERN, PA, Feb 27, 2014 (Marketwired via COMTEX) — Vishay Intertechnology today announced that it will be showcasing its latest industry-leading solutions at the 2014 Optical Fiber Communications Conference and Exhibition, taking place March 9-13 at the Moscone Center in San Francisco.
In booth 3482, products on display will include a wide range of Vishay EFI custom submounts, custom substrates with sidewall patterning, high-performance RF capacitors, and wire-bondable products.
Featured submounts at the 2014 OFC/NFOEC will include Vishay EFI's AlN (aluminum nitride), BeO (beryllium oxide), and Al203 (aluminum oxide) ceramic substrates, which offer copper-filled vias, thick copper traces, and laser-machined shapes. For bonding, gold/tin solder features 70/30 to 80/20 compositions and thickness from 2 to 8 microns. Also on display will be Vishay EFI's custom substrates with sidewall patterning. Ideal for high-frequencyThe number of complete cycles or vibrations per unit of time. Rate of alternation in an AC current. Expressed in cycles per second or hertz (Hz). circuits in RF applications and high-bit-rate transceivers, the substrates feature a plate thickness of 0.025 inches, minimum gap of 0.003 inches, and are available in a variety of metal systems.
For impedanceThe total opposition that a circuit offers to the flow of alternating current or any other varying current at a particular frequencyThe number of complete cycles or vibrations per unit of time. Rate of alternation in an AC current. Expressed in cycles per second or hertz (Hz).. It is a combination of resistance R and reactance X, measured in ohms. matching circuits, decouplingA decoupling capacitor is a capacitor used to decouple one part of an electrical network (circuit) from another. Noise caused by other circuit elements is shunted through the capacitor, reducing the effect they have on the rest of the circuit, DC blocking, and lumped element filters, Vishay EFI will be highlighting its RFCS surface-mount thin film RF capacitors. The devices feature capacitanceThat property of a system of conductors and dielectrics which permits the storage of electricity when potential difference exists between the conductors. Its value is expressed as the ratio of a quantity of electricity to a potential difference. A capacitance value is always positive. from 0.2 pFUnit of capacitance. The basic unit of a measure of a capacitor. A capacitor charged to 1 volt with a charge of 1 coulombA coulomb is the unit of electric charge. It is named after Charles-Augustin de Coulomb.1 coulomb is the amount of electric charge transported by a current of 1 ampere in 1 second. It can also be defined in terms of capacitance and voltage, where one coulomb is defined as one farad of capacitance times one volt of electric potential difference. would have a capacitance of 1 farad. 1 microF = .000001 Farads. to 27 pFUnit of capacitance. The basic unit of a measure of a capacitor. A capacitor charged to 1 volt with a charge of 1 coulombA coulomb is the unit of electric charge. It is named after Charles-Augustin de Coulomb.1 coulomb is the amount of electric charge transported by a current of 1 ampere in 1 second. It can also be defined in terms of capacitance and voltage, where one coulomb is defined as one farad of capacitance times one volt of electric potential difference. would have a capacitance of 1 farad. 1 microF = .000001 Farads., low DCR, and high Q and SRF. Highlighted wire-bondable products will include resistors with TCR to 25 ppm/ degrees C and power ratings to 1 W; resistor networks with tolerances to 0.05 %; single and binary capacitors; and inductors with inductance from 3 nH to 150 nH.
