EPC launches WiTricity demo system featuring high-frequency eGaN FETs
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, has launched a high-efficiency wireless power demonstration system using the high-frequency switching capability of gallium nitride transistors. EPC says that its eGaN FETs suit these systems because of their ability to operate efficiently at high frequency, voltage, and power.
Highly resonant wireless power transfer was invented by the founders of WiTricity, which licenses its intellectual property to firms seeking to build products based on the technology. Capable of transferring power over distance, WiTricity technology enables a wide range of consumer, medical, industrial and automotive applications. Products using highly resonant wireless power transfer can meet stringent regulatory guidelines, and is safe for people and animals, says the firm.
Many wireless charging products now in the market use traditional magnetic induction coils with operating frequencies of 100-300kHz, and Class E, F and S amplifier converter topologies. Recently, organizations such as the Consumer Electronics Association and A4WP (Alliance for Wireless Power) have called for a higher-frequency standard (6.78MHz) for wireless charging systems. At higher frequencies, traditional silicon-based power transistors (MOSFETs) approach the limit of their switching capability. EPC says that eGaN FETs offer higher efficiency compared to MOSFETs at these higher frequencies.
The wireless power demonstration system jointly developed by EPC and WiTricity is a class-D power system operating at 6.78MHz, and capable of delivering up to 15W to a load. The purpose of the system is to simplify the evaluation process of the wireless power technology. It includes all the critical components in a single system that can be easily connected to demonstrate the powering of a device with wireless energy transfer.
Tags: EPC E-mode GaN FETs
