Researchers in China have improved LED power output and droop behavior in nitride semiconductor light-emitting diodes (LEDs) by including an electron-emitting layer under the active region [Jianbao Zhang et al, Appl. Phys. Express, vol5, ...
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
LEDs - or Light-Emitting Diodes – are semiconductors that generate narrow-spectrum light when electrically biased in the forward direction of the p-n junction. This effect is a form of electroluminescence. A single LED is often a ...
Tags: LED
Driven by market demand, the semiconductor industry progressed toward consensus on building-block standards for automating LED production on 6-in wafers at the Semicon West conference, explains PAULA DOE. ...
Tags: LED
Agnitron Technology, Inc. has completed the development of the original state of the art compact MOCVD research and development system, known as Agilis. The small volume reactor system provides an economical choice to universities and ...
Tags: MOCVD
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminum nitride(AlN)and aluminum gallium nitride(AlGaN)materials and related products and services,is to enter the GaN crystal growth equipment ...
Taiwan researchers have achieved a reduction in luminous efficiency droop from 42%to 7%by inserting p-type indium gallium nitride(p-InGaN)between the active light-emitting and electron-blocking layers of a nitride semiconductor ...
According to a filing on 24 August with the US Securities&Exchange Commission(SEC),HexaTech Inc of Morrisville,NC,USA has raised$500,000 in new debt financing involving six investors.A further$54,496 remains still to be raised from ...
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
Latest issue of Semiconductor Today now available For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month,subscribe to Semiconductor ...
Tags: Issue, Semiconductor, Lights
US-based researchers have reported record external quantum efficiencies(EQE)of 10.4%for deep ultraviolet light-emitting diodes(DUV-LEDs)emitting at a wavelength of 278nm at a continuous-wave current of 20mA[Max Shatalov et ...
China's Xiamen Powerway Advanced Material Co Ltd (PAM-Xiamen), which supplies ultra-high purity crystalline gallium nitride (GaN) and aluminium gallium nitride (AlGaN) materials and other related products and services, has announced the ...
Tags: Free-standing, SI, carbide
Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor