Diamond Microwave articles & resources on Made-in-China.com

Diamond Microwave Launches GaN X-Band Sspas with Integrated Monitoring and Protection

May 26, 2016

Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...

Tags: GaN-on-diamond, radar application

Diamond Microwave Launches 1kw Ultra-Compact Pulsed GaN X-Band SSPA

Sep 15, 2015

Exhibiting in Stand 250 at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has announced a ten-fold ...

Tags: EuMW 2015, GaN, Diamond Microwave

Diamond Microwave Re-Designed Its Range of Gan-Based Sspas Into a New Common Module Format

May 19, 2015

Diamond Microwave Devices Ltd of Leeds, UK (which was spun out in 2006 from the diamond electronics team of Element Six and specializes in high-performance microwave power amplifiers) has re-designed its range of gallium nitride (GaN)-based ...

Tags: Diamond Microwave Devices, power amplifiers

Diamond Microwave Devices Ltd of Leeds Is Extending Its Range of SSPAs

Jun 6, 2014

Diamond Microwave Devices Ltd of Leeds, UK, which was spun out in 2006 from the diamond electronics team of Element Six and specializes in gallium nitride (GaN)-based microwave solid-state power amplifiers (SSPAs), is extending its range of ...

Tags: GaN-on-diamond, Diamond Microwave

Diamond Microwave Has Launched an Ultra-Compact High-Power SSPA Operating

Aug 9, 2013

Diamond Microwave Devices Ltd of Leeds, UK, which was spun out in 2006 from the diamond electronics team of Element Six and specializes in gallium nitride (GaN)-based microwave solid-state power amplifiers (SSPAs), has launched an ...

Tags: GaN-on-diamond, Electrical, Electronics

Diamond Has Many Attractive Qualities for High-Power Devices

Sep 13, 2012

University of Glasgow and UniversitéParis researchers have demonstrated for the first time RF performance of 50nm gate-length diamond field-effect transistors(FETs)[Stephen A.O.Russell et al,IEEE Electron Device Letters,published ...

Tags: Diamond, Element Six, Electrical