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LED Lighting – The Most Rebellious Term in Lighting Industry Today

Mar 22, 2019

Remember the stories during childhood that you heard from granny about candles and lamps used for lighting purpose. Your studies must have been executed with the help of electricity, tube lights, bulbs, etc. mostly. Now in the 21st century, ...

Tags: led bulb light, led floodlight, led lighting, led panel, led bulb

Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

Beryllium Doping of Gallium Nitride Shown to Offer Promise for Higher Efficiency in Power Electronics

Nov 15, 2017

Working with scientists in Texas and Warsaw, researchers at Finland’s Aalto University have made a breakthrough in revising methods largely discarded 15 years ago (‘Amphoteric Be in GaN: Experimental Evidence for Switching ...

Tags: GaN Power electronics

LED Technology Breakthroughs in 2016

Dec 31, 2016

As 2016 comes to an end, there were many exciting and surprising technology breakthroughs, based on statistics complied by LEDinside there were at least 10 major technology advancements this year. American researchers make droop free LEDs ...

Tags: LED, UV LED

Berkeley Lab-LED Team Fabricates Transistor with Record 1nm-Long Gate

Oct 12, 2016

A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...

Tags: Berkeley Lab, transistor with record 1nm-long gate

Electrically Driven Single-Photon Emission From Atomically Thin Diodes

Oct 12, 2016

The UK's University of Cambridge and Japan's National Institute for Materials Science have developed single-photon emission devices using layers of graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs) [Carmen ...

Tags: single-photon emission devices, hBN

Integrating InGaAs Well in Ridges on 300mm Silicon

Sep 29, 2016

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

Two-Dimensional Gallium Nitride with Graphene Encapsulation

Sep 28, 2016

Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...

Tags: 2D GaN, graphene encapsulation, SiC

Hyundai Motor to Unveil H350 Fuel Cell Concept at 2016 IAA Commercial Vehicle Show

Sep 27, 2016

Hyundai Motor is introducing H350 fuel cell concept At the 2016 IAA Commercial Vehicle Show in Hanover, Germany. Providing a glimpse into the future of the LCV, Hyundai Motor’s new H350 Fuel Cell Concept shows the suitability of the ...

Tags: Hyundai Motor, H350 fuel cell concept, 2016 IAA Commercial Vehicle Show

University of Colorado Boulder Develops Method for Room-Temperature Atomic Layer Deposition

Sep 7, 2016

As part of the Local Control of Materials Synthesis (LoCo) program of the US Defense Advanced Research Projects Agency (DARPA), the University of Colorado, Boulder (CU) have developed the new electron-enhanced atomic layer deposition ...

Tags: EE-ALD, LoCo, DARPA

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

UIUC Uses MOCVD Growth of Cubic GaN on Silicon to Boost Efficiency and Brightness of Green LEDs

Aug 3, 2016

Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...

Tags: Green LEDs, MOCVD

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

Jul 27, 2016

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Apr 29, 2016

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs

Apr 21, 2016

Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...

Tags: InGaN LEDs InGaN Silicon dioxide MOCVD

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