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EpiGaN
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EpiGan Showcasing GaN Epiwafer Solutions for 5G
Aug 31, 2018In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...
Tags: GaN Epiwafer, epitaxial wafer
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EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor
Aug 31, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
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EpiGaN Nominated for Eu Innovation Radar Prize
Aug 17, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
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Epigan's Production Facility Certified as Compliant to ISO9001: 2015
Jun 30, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...
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GaN Power Devices Market to Grow at 24.5% to $2.6bn in 2022
Feb 29, 2016The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...
Tags: GaN power devices
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SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics
Oct 19, 2015When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
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EpiGaN Named in The 2014 Global Cleantech 100's Ones to Watch List
Nov 18, 2014III-nitride epitaxial material supplier EpiGaN nv of Hasselt, Belgium has been named in the 2014 Global Cleantech 100's Ones to Watch list, produced by San Francisco-based Cleantech Group (whose mission is to connect corporates to ...
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The Market Is Forecasted to Reach $15.6bn by 2022
Apr 10, 2014According to the report 'Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013–2022' from MarketsandMarkets, ...
Tags: semiconductor, Electrical, Electronics
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IEMN Claimed a Record Combination of Specific on-Resistance and Breakdown Voltage
Feb 27, 2014Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...
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IEMN Developed a GaN on Silicon High-Electron-Mobility Transistor
Apr 17, 2013Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
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AIXTRON SE Introduced a 5 X 200mm Gallium Nitride on Silicon Reactor Design
Dec 25, 2012AIXTRON SE introduced a 5 x 200mm gallium nitride on silicon (GaN-on-Si) reactor design for its G5 Planetary Reactor metal organic chemical vapor deposition (MOCVD) platform. AIX G5+ comprises special reactor hardware and process design, ...
Tags: MOCVD
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Reducing Noise at High Frequency in Nitride-on-Silicon Transistors
Aug 10, 2012Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
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Latest Issue of Semiconductor Today Now Available
Jul 31, 2012Latest issue of Semiconductor Today now available For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month,subscribe to Semiconductor ...
Tags: Issue, Semiconductor, Lights
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EpiGaN of Hasselt Has Successfully Commissioned Two New MOCVD Systems
Jul 19, 2012EpiGaN starts 8-inch GaN-on-Si development on Aixtron reactors Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that new customer EpiGaN of Hasselt, Belgium, a start-up manufacturer of III-nitride epitaxial material, ...
Tags: Aixtron MOCVD
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Epigan Develops New Wafers with Aixtron Mocvd Reactors
Jul 19, 2012AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in ...
Tags: MOCVD, GaN-on-Si Wafer