With LED lighting popularity rapidly climbing worldwide, the Taiwan International Lighting Show (TILS) continues to be held in conjunction with LED Taiwan at the same venue this year, serving as a one-stop sourcing platform for buyers ...
Tags: Lighting Industry, LED
Prices for 12-inch blank silicon wafers are set to continue rising, driven by robust demand from foundries and memory chipmakers, according to industry sources. Wafer suppliers are mulling adjusting upward their contract quotes for ...
Tags: Silicon Wafers, memory chip
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that solid-state lighting manufacturer HC SemiTek Corp of Wuhan, China (which supplies full-spectrum visible light LED chips) has ordered ...
Tags: Veeco, MOCVD system, HC SemiTek
South Korean LED maker Seoul Semiconductor Co Ltd (SSC), together with its affiliate company Seoul Viosys Co Ltd, has filed a patent infringement lawsuit in the US District Court for the Central District of California against global retail ...
Tags: SSC, Seoul Viosys, Kmart
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received an order for its 25th GENxplor R&D molecular beam epitaxy (MBE) system. Introduced in August 2013, the GENxplor system is said to be ...
Tags: Veeco MBE, GENxplor system
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
A group of Texas Tech University researchers led by professors Hongxing Jiang and Jingyu Lin has developed hexagonal boron nitride semiconductor as a possible low-cost alternative to helium gas detectors in neutron detection ('Realization ...
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination