In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, has redesigned its website to include ...
Tags: EPC, Electrical, Electronics
Funded by the US Army Research Office, researchers at North Carolina State University ( at the atomic scale (just one atom thick). The technique can be used to create the thin films on a large scale, sufficient to coat wafers that are ...
Tags: NCSU, Atomic-Layer Thin-Film
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its EPC9005 development board featuring the firm’s 40V EPC2014 enhancement-mode gallium nitride (eGaN) field-effect transistors (FETs) – as launched in ...
Tags: Power Conversion, GaN devices
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9010 development board to make it easier for engineers to start designing with a 100V enhancement-mode gallium nitride (eGaN) field-effect transistor (FET) ...
Tags: EPC, Power Conversion, eGaN FETs
OPEL Technologies Inc of Toronto, Ontario, Canada – which develops III-V semiconductor devices and processes through US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT – says that it has achieved Milestone 4 ...
Tags: OPEL, semiconductor devices, semiconductor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, will be presenting an educational ...
Tags: EPC, eGaN Technology, APEC
Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
ISSCC 2013 - 60th Anniversary Held every year in February in San Francisco, the IEEE's International Solid State Circuits Conference (ISSCC) is the world showcase for innovative circuit design. This is the 60th conference, and year's ...
Tags: Circuits Conference, capacitors, inductors
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
LT8705 from Linear Technology operates over 2.8 to 80V input range and can produce a 1.3 to 80V at up to 250W, with up to 98% efficiency. The topology is four switch (external n-fets), single inductor; and over 1kW can be delivered by ...
Tags: LT8705, Linear Technology, topology
LT8705 from Linear Technology operates over 2.8 to 80V input range and can produce a 1.3 to 80V at up to 250W, with up to 98% efficiency. The topology is four switch (external n-fets), single inductor; and over 1kW can be delivered by ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has made available the EPC9004 development board, featuring the firm’s enhancement-mode gallium nitride on silicon (eGaN) field-effect transistors (FETs) for power ...
Tags: EPC, Power Systems, eGaN FETs
Researchers in the USA have developed radio frequency switches based on nitride semiconductor voltage-controlled capacitors (varactors) [F. Jahan et al, IEEE Electron Device Letters, 9 January 2013]. The team, consisting of engineers from ...
Tags: radio frequency switches, nitride semiconductor voltage, SET
Renesas Electronics has introduced low on-state resistance mosfets which are optimised for use as ORing FETs in power supplies. The on-state resistance is 0.72mΩ (typical value) for 30V. This is about 50% lower resistance ...