Free standing

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer

Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...

Tags: GaN, HVPE, free-standing wafers

Sodium Flux Route to Free-Standing Gallium Nitride Substrates

Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...

Tags: Gallium Nitride Substrates, GaN crystal

Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor

Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...

Tags: Bipolar Transistor

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown

HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...

Hybrid Growth of Gallium Nitride Tunnel Junctions

University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...

Tags: Gallium Nitride Tunnel, Hybrid

Ultraviolet Photodetectors on Free-Standing Gallium Nitride

Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...

Tags: AlGaN, Ultraviolet photodetectors, HVPE