GaAs transistor ALE

The Performance Was Enabled by ALE of Dielectric to Reduce Interface Trap Densities
Mar 28, 2013
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...

Tags: NMOSFETs, GaAs, GaAs transistor ALE