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GaN HEMT devices
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Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W
Aug 28, 2017Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
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Wolfspeed Launches 50V Plastic-Packaged GaN HEMTs for LTE & Radar
Oct 15, 2015Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
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Transphorm Announced The Introduction of Two Co-Branded 600v GaN Cascode Transistors
Mar 17, 2015At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...
Tags: APEC 2015, GaN Power Devices
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USA Is Enhancing Its Support of The European Market by Extending Its Partnership with APC
Aug 22, 2014Cree Inc of Durham, NC, USA is enhancing its support of the European market by extending its partnership with UK-based distributor APC Novacom. APC Novacom now stocks all Cree RF devices that do not require a European Union (EU) license, ...
Tags: Cree, APC, Electrical
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CREE Licenses Gan Device Patents License Agreement with Transphorm
Aug 6, 2013, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree's extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN ...
Tags: Cree GaN HEMT, Lights, Lighting
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Cree Has Signed a Non-Exclusive Worldwide Patent License Agreement with Transphorm
Aug 5, 2013Cree Inc of Durham, NC, USA has signed a non-exclusive worldwide patent license agreement with Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) that provides access to ...
Tags: Transphorm Cree, Electrical, Electronics
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TriQuint Semiconductor Makes and Distributes RF Components for Analog Wireless Networks
Jul 3, 2013RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA says that RF-Lambda of San Diego, CA, USA, which makes and distributes RF components for analog wireless networks in North America, ...
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EPSRC Has Awarded Funding Totaling More Than £823,800m to Two Universities
May 2, 2013The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
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Cree Released a New Suite of Verilog-A Proprietary Nonlinear Device Models
Jun 25, 2012Cree Inc of Durham,NC,USA has released a new suite of Verilog-A proprietary nonlinear device models for its gallium nitride(GaN)RF devices(available free to Cree's RF customers),developed for use with leading RF design platforms from ...
Tags: Cree, GaN, RF devices, Verilog-A RF device models, IMS
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21 June 2012 Sumitomo Launches Next-Gen GaN HEMT for L and S-Band Satellite Applications
Jun 21, 201221 June 2012 Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications In booth 2003 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),wireless and optical communications ...
Tags: Sumitomo Electric, GaN HEMT, Satellite Applications, IMS 2012
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Cree Announced The Sample Release of GaN HEMT
Jun 18, 2012Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
