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GaN HFETs GaN MOCVD
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RWTH Aachen Reported The First Small-Signal Response Frequency Characteristics
Nov 26, 2013RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics