GaN SiC articles & resources on Made-in-China.com

Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors

Jun 21, 2016

Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...

Tags: SiC, MOSFET, AlGaN

Laytec Expands Epinet Library's High-Temperature Nk Database and Real-Time Analysis for GaN/Sic-4h HEMTs

Dec 3, 2015

AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...

Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs

Silicon Carbide Chip Business Was Worth More Than $133m

Aug 4, 2015

According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...

Tags: SiC Market, power electronics

Richard Eden Attended The Recent PCIM Europe 2015 Tradeshow in Germany

Jun 16, 2015

Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...

Tags: GaN SiC, Power electronics

GaN Systems Is Claiming That Its GS66504B Is The World's Smallest 650V

May 28, 2015

GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – is claiming that its GS66504B – one of a family ...

Tags: GaN Systems, Power electronics, GaN SiC

Google & IEEE PELS Launched The Little Box Challenge

Aug 20, 2014

Google and the Institute of Electrical and Electronic Engineers’ Power Electronics Society (IEEE PELS) have launched the Little Box Challenge, an open competition with a $1m prize to create a much smaller but higher-power-density ...

Tags: inverters, GaN SiC, Power Inverter

MANGA Has Succeeded in Implementing a Supply Chain for The Realization of Power Electronic

Jul 10, 2014

Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...

Tags: GaN Technologies, HEMT structures, electronics components

Power Electronics Device Market to Reach $20bn This Year

Jul 23, 2012

Power electronics device market to reach $20bn this year The total market for semiconductor devices (discretes, modules and ICs) dedicated to the power electronics industry will reach $20bn in 2012, according to the report 'Status of the ...

Tags: raw material, GaN SiC

The Epitaxial Structures Were Grown on Silicon Carbide Using MOCVD

Jun 21, 2012

University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...

Tags: Raw Material

Funding in The UK Has Now Resulted in 43 Projects

Jun 5, 2012

Following opening of the competition last Autumn and closing for applications in December,the'Technology Inspired Innovation'competition for collaborative research&development funding in the UK has now resulted in 43 projects being chosen ...

Tags: UK funds, compound semiconductor, Photonics and Electrical Systems

GaN SiC

Related Products