GaN amplifiers articles & resources on Made-in-China.com

Advantech Wireless Launches Second-Generation 4.4–5.0GHZ GaN-Based Amplifiers For Extended Troposcatter Networks

Mar 9, 2016

Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the second-generation 500W, 4.4–5.0GHz gallium nitride (GaN)-based solid-state power amplifier (SSPA). The ...

Tags: GaN HEMT

Japanese Project Develops Microwave Heating System Using GaN Amplifier Module Heaters

Feb 3, 2016

Mitsubishi Electric Corp, Tokyo Institute of Technology, Ryukoku University and Microwave Chemical Co Ltd have jointly developed a microwave heating system that uses 500W-output gallium nitride (GaN) amplifier modules as heat sources. The ...

Tags: Microwave Heating System, GaN Amplifier

TMS Launches Modular Line of Non-Itar 0.1-6.0GHz GaN Amplifiers with Small Form Factor for Harsh Airborne Requirements

Nov 27, 2015

Teledyne Microwave Solutions Inc of Mountain View, CA, USA (TMS, a business unit of Teledyne Technologies Inc) has launched a line of gallium nitride (GaN)-based wideband amplifiers that is claimed to further lower the form factor threshold ...

Tags: TMS, GaN amplifiers

RFMD Inc of Greensboro, Nc, USA Has Unveiled 11 New Amplifiers

Sep 23, 2014

RF Micro Devices Inc of Greensboro, NC, USA has unveiled 11 new amplifiers, of which six are gallium nitride (GaN)-based products to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1. RFMD is ...

Tags: RFMD, 3.1 Cable Networking, Electronics

RF Micro Devices Reported Revenue of $256m

May 5, 2014

For its fiscal fourth-quarter 2014 (ended 29 March), RF Micro Devices Inc of Greensboro, NC, USA has reported revenue of $256m, down 11.3% on $288.5m last quarter and 8.8% on $280.6m a year ago. Fiscal Q4/2013 Q1/2014 Q2/2014 Q3/2014 ...

Tags: RFMD, Electrical, Electronics

RFMD Reports Financial Results for The Company's Fiscal 2014 Fourth Quarter

May 4, 2014

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, reported financial results for the Company's fiscal 2014 fourth quarter, ended March 29, 2014. Quarterly Highlights: ...

Tags: Micro Devices, radio frequency solutions

RFMD Was Recognized During The CableFAX Digital and Tech Awards Ceremony

Mar 21, 2014

RF Micro Devices Inc of Greensboro, NC, USA says that its gallium nitride (GaN) amplifier family for the new DOCSIS 3.1 CATV networking standard has won the CableFAX Tech Award for Green Technology, which recognizes technology that helps ...

Tags: RF Micro Devices, GaN amplifier, CATV networking

TriQuint Semiconductor Is Releasing New GaAs Phase Shifters

Dec 5, 2013

In conjunction with the Defense Manufacturers Conference (DMC 2013) in Orlando, FL (2-5 December), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is releasing new gallium arsenide ...

Tags: TriQuint, Gan Amplifiers, Gaas Phase Shifters

TriQuint Semiconductor Launched The First Two Members

Oct 23, 2013

At the SCTE Cable-Tec Expo in Atlanta (21-24 October), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched the first two members of its cost-effective TriAccess ...

Tags: TriQuint, Gan Amplifiers, Electrical, Electronics

TriQuint Semiconductor Announced The Release of New Gallium Nitride Transistors

Oct 9, 2013

TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced the release of new gallium nitride (GaN) transistors that offer what is claimed to be superior gain, thermal management and efficiency for commercial and defense RF amplifier ...

Tags: TriQuint, Optical Modulator

Tesat-Spacecom GmbH Developed a Hermetically Sealed Package

Jul 8, 2013

The Electronic Packaging business unit of SCHOTT technology group of Mainz, Germany and Tesat-Spacecom GmbH of Backnang, Germany (a manufacturer of systems and equipment for telecoms via satellite) have developed a hermetically sealed ...

Tags: power amplifier, Electrical, Electronics, Satellite

TriQuint Semiconductor Announced 15 New GaN Amplifiers and Transistors

May 24, 2013

RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes – to be displayed in ...

Tags: TriQuint, Electrical, Electronics

Mitsubishi Has Developed The MGFK47G3745 Gallium Nitride(GaN)High-Electron-M Transistor

Sep 13, 2012

Tokyo-based Mitsubishi Electric Corp has developed the MGFK47G3745 gallium nitride(GaN)high-electron-mobility transistor(HEMT)Ku-band(12–18GHz)amplifier for satellite earth stations. Picture:Simplified schematic of amplifier. ...

Tags: Electrical, Mitsubishi, Electric

GaN Technology Generated Significant Industry Interest Due to Its Performance Advantages

Jun 20, 2012

Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...

Tags: NXP, RF applications, mainstream GaN

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