- Location
GaN based transistors
"-
EPC Posts Video Series on How to Design with GaN Power Devices for Power Conversion
Feb 12, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has expanded its video library on GaN ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
-
Toyoda Gosei Researchers Makes Breakthrough in GaN Nanoelectronics-Transistor Blocking Voltage
Nov 11, 2015Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based ...
-
GaN Devices Market Growing at CAGR of 15.1% From $481.8m in 2014 to $1315m in 2021
Aug 10, 2015The global gallium nitride (GaN) industrial devices market is rising at a compound annual growth rate (CAGR) of 15.1% from $481.8m in 2014 to $1315m in 2021, forecasts Transparency Market Research in its report 'GaN Industrial Devices ...
Tags: industrial devices, LED devices
-
EPC of EL Segundo Has Announced The Publication of The Second Edition
Oct 15, 2014Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the publication of the ...
-
EPC Has Created and Posted on Line an 11-Part Educational Video Podcast Series
Apr 25, 2014Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has created and posted on line an 11-part ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
-
IQE and II-VI Has Launched GaN-Based High-Electron-Mobility Transistor Epitaxial Wafers
May 14, 2013Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
-
GaN-Based Transistors Are Promising for Future High-Frequency/High-Power Devices
Mar 22, 2013The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
-
Reducing Noise at High Frequency in Nitride-on-Silicon Transistors
Aug 10, 2012Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors