GaN Systems Inc of Ottawa, Ontario, Canada, a fabless provider of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has appointed US engineering consultancy Vqdot as an Applications ...
Tags: GaN Systems, Electrical, Electronics
Spending on microwave RF power semiconductors has been kick-started by the availability of new gallium nitride (GaN) devices for 4-18GHz, says market intelligence firm ABI Research in its new report 'Microwave RF Power Semiconductors' (part ...
Tags: Semiconductor, Electrical, Electronics
To increase the efficiency of voltage converters and minimize heat losses, researchers at the Fraunhofer Institute for Applied Solid State Physics IAF in Germany are developing transistors based on gallium nitride, characterized by low ...
Tags: IAF FBH, Electrical, Electronics
Diamond Microwave Devices Ltd of Leeds, UK, which was spun out in 2006 from the diamond electronics team of Element Six and specializes in gallium nitride (GaN)-based microwave solid-state power amplifiers (SSPAs), has launched an ...
Tags: GaN-on-diamond, Electrical, Electronics
In a trading update for first-half 201, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says it expects first-half performance to be ahead of market expectations, with revenue approaching £63m, EBITDA (earnings ...
Tags: IQE, Electrical
Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V. Features of the MB51T008A include: (1) ...
Tags: Power Device, Electrical
GaN LEDs set to top 100 billion units 25 Jun 2013 Shipments of the blue-emitting chips will reach new milestone this year, reports analyst company IHS. Analysts at the market forecasting company IMS Research (part of IHS) are expecting ...
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University in Brisbane, Australia and its industry partner, plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, have ...
Tags: Silicon, Micro and Nanotechnology
Xilinx Inc of San Jose, CA, USA, which provides all-programmable field-programmable gate arrays (FPGAs), systems-on-chip (SoCs) and 3D ICs, and Japan's Sumitomo Electric Industries Ltd are collaborating to reduce capital expenditure (CapEx) ...
Tags: SEI, Electrical, Electronics
Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has produced what are reckoned to be the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafers, which ...
Tags: Triquint, Electronics, HEMT devices
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its EPC9005 development board featuring the firm’s 40V EPC2014 enhancement-mode gallium nitride (eGaN) field-effect transistors (FETs) – as launched in ...
Tags: Power Conversion, GaN devices
Arkansas Power Electronics International Inc (APEI) of Fayetteville, AR, USA, a developer of technology for power electronics systems, electronic motor drives and power electronics packaging, and GaN Systems Inc of Ottawa, Ontario, Canada, ...
Tags: APEI, GaN Systems, Electronics
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has launched the Total GaN family of gallium nitride on silicon transistors and diodes, establishing what is claimed to ...
Tags: Transphorm, power devices, GaN device