Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has received an award from the US Department of Energy for its work in the ...
Tags: Soraa GaN-on-GaN, Electronics, Lighting
Taiwan researchers have used a self-textured oxide mask (STOM) as a template to enhance the external quantum efficiency (EQE) of nitride 380nm ultraviolet (UV) light-emitting diodes (LEDs) by up to 83% [Kun-Ching Shen et al, IEEE Electron ...
Tags: LED light, LED, LED light extraction
BluGlass has utilized its low temperature RPCVD process to develop p-type GaN, an essential material that make up the top layers of a nitride LED. Preliminary testing has been carried out on the sample using a 0.5mm diameter size p-type ...
Tags: GaN, raw material, LED
Seoul National University and Ritsumeikan University in Korea have developed a new technique for growing higher-quality gallium nitride (GaN) layers at temperatures as low as 500°C [In-Su Shin et al, Appl. Phys. Express, vol5, p125503, ...
Tags: Lights, Instruments, Meters
Light output power increased 23% over conventional lateral LEDs. Korea's universities have used aluminum-alloyed graphite as a thermally conducting substrate to improve the light output power performance of nitride semiconductor LEDs by ...
Tags: LED
Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...
Australian clean technology innovator,BluGlass Limited announced today that it is now producing n-type gallium nitride(GaN)films with demonstrated industry equivalent performance properties using its breakthrough low temperature Remote ...
BluGlass Ltd of Silverwater, Australia says it is now able to produce gallium nitride (GaN) with industry standard impurity levels using its low temperature remote-plasma chemical vapor deposition (RPCVD) technology. The RPCVD grown GaN ...
Tags: GaN, BluGlass Ltd, Australia, carbon and oxygen reduction
Epistar, Taiwan's largest manufacturer of packaged LEDs has decided to trial silicon-based wafers. The company is hoping to take advantage of cost savings in the backend of the LED manufacturing process to in turn broaden SSL deployment. ...
Toshiba plans silicon-based LED production; Azzurro installs Veeco MOCVD 31 Jul 2012 Veeco Instruments announced that Azzurro Semiconductors has commissioned a new Veeco MOCVD reactor for silicon-based LED production while Toshiba plans to ...
Veeco Instruments Inc.announced that AZZURRO Semiconductors AG,a pioneer in GaN-on-Si technology headquartered in Germany,has recently placed into production the TurboDisc®K465i™gallium nitride(GaN)Metal Organic Chemical Vapor ...
Tags: The MOCVD system, GaN-on-Silicon Epiwafer, Dr.Markus Sickmöller
AZZURRO chooses Veeco K465i MOCVD system for GaN-on-Si epi production Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium ...
22 June 2012 Sandia's InGaN nanowire template permits flexible solar energy absorption Researchers in solar energy want to convert as many of the sun's wavelengths as possible to achieve maximum efficiency.They hence see indium gallium ...
Tags: InGaN nanowire, solar energy, solar cell, MOCVD, photovoltaic systems
With the small-footprint XB-D LED, Cree intends to lower the cost, in terms of lumens per dollar, for SSL lamp and luminaire designs. Cree has announced the new XLamp XB-D LED family that features components measuring 2.45x2.45 mm, that the ...
Tags: Market View, led
Bridgelux Inc., a leading developer and manufacturer of LED lighting technologies and solutions, has shattered its previous industry record for highest Lumen per Watt values for Gallium Nitride on Silicon (GaN-on-Si). Using its proprietary ...