GaN on Si articles & resources on Made-in-China.com

Toshiba to Expand Range of GaN-on-Si High Power White LEDs

Oct 14, 2015

Toshiba Electronics Europe has added four new products to its TL1L4 series of white LEDs. These new additions provide a high luminous flux and are suited to applications ranging from street and stadium lighting to LED light bulbs and down ...

Tags: Toshiba, white LED, GaN-on-Si

Plessey's Chip-Scale Optics for for GaN-on-Si LEDs Cuts Cost and Increases Design Flexibility

Sep 23, 2015

UK-based Plessey has developed a patented technology for chip-scale optics (CSO) based on its gallium nitride on silicon MaGIC (Manufactured on GaN-on-Si I/C) LEDs. Chip-scale optics permits the design of light emission angles down to ...

Tags: Plessey, GaN-on-Si LEDs, silicon, CSO technology

MACM Samples 4th-Generation 100w GaN-on-Si Wideband Transistor

Sep 15, 2015

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has announced that the MAGX-100027-100C0P, a wideband ...

Tags: semiconductors, photonic applications, transistor

MACOM Adds GaN-on-Si Wideband Power Transistor for CW, Pulsed and Linear Operation up to 200W

Sep 15, 2015

At European Microwave Week (EuMW 2015) in Paris, France (8–10 September), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and ...

Tags: MACOM, microwave

Demand for Larger Diameters to Boost GaN Substrate Market From $2.2bn in 2014 to $4bn by 2020

Sep 14, 2015

The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...

Tags: Diameters, GaN Substrate Market

Plessey Wins £6.7m Grant From UK Regional Growth Fund for LED Production Expansion

Sep 14, 2015

UK-based Plessey says that the Regional Growth Fund (RGF) has officially granted £6.7m towards the expansion of its facility in Plymouth, UK for manufacturing its MaGIC (Manufactured on GaN-on-Si I/C) gallium nitride on silicon LEDs. ...

Tags: LED Production, LED street

MACOM Ships Millionth GaN-on-Si RF Power Device

Sep 11, 2015

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has now shipped more than 1 million gallium nitride on ...

Tags: M/A-COM Technology, RF Power Device

Transfer of ALLOS' 150 and 200mm GaN-on-Si epi Technology to Epistar Concluded in Under 6 Months

Aug 20, 2015

Technology engineering & licensing firm ALLOS Semiconductors GmbH of Dresden, Germany have concluded its joint project to establish its mature 150 and 200mm gallium nitride on silicon (GaN-on-Si) technology at Epistar Corp of Hsinchu ...

Tags: electronics, semiconductor, Azzurro GaN-on-Si, Epistar LEDs

Plessey Launches Range of LED Filaments Using GaN-on-Si Die

Aug 10, 2015

UK-based Plessey has launched its range of LED filaments, manufactured with the firm's MaGIC (Manufactured on GaN-on-Si I/C) gallium nitride on silicon LEDs. The filaments are designed for the surging filament bulb market, where these ...

Tags: LED Filaments, GaN-on-Si Die

Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon

Jul 27, 2015

Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...

Tags: electronics, semiconductor

Plessey Semiconductors Is to Lead UK Government-Funded Project

Jul 15, 2015

UK-based Plessey Semiconductors is to lead a £1.3m UK government-funded project in conjunction with Aixtron Ltd (the UK subsidiary of deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany) and Bruker Nano ...

Tags: Semiconductors, deposition equipment, LEDs

Exagan Raised €5.7m to Produce High-Speed Power Switching Devices on 200mm Wafers

Jun 25, 2015

Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, has raised €5.7m in first-round financing that will be used to produce high-speed power switching ...

Tags: GaN-on-Si, GaN switching device

M/A-COM Launched The NPT2022

May 26, 2015

At the IEEE MTT-S International Microwave Symposium (IMS 2015) in Phoenix, AZ (19-21 May), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...

Tags: Power Transistor, Linear Operation

X-FAB and Exagan Have Entered Into a Joint Development Agreement

May 21, 2015

X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan's GaN-on-silicon technology, begin producing high-speed power switching ...

Tags: Power Switching Devices, GaN-on-silicon technology

M/A-COM Has Launched Its Fourth Generation of GaN-on-Si Technology

May 14, 2015

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...

Tags: GaN Technology, silicon carbide

GaN on Si

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