Embattled Taiwanese LED packager Everlight and Japanese manufacturer Nichia both published press releases on Nov. 6, 2013 regarding their latest YAG patent dispute in China. The two companies ongoing patent wars has rekindled LED industry ...
Tags: LED Manufacturers, Lighting
Tokyo-based semiconductor manufacturer Toshiba Corphas announced the first devices in its second generation of LETERAS white LEDs fabricated using a gallium nitride-on-silicon (GaN-on-Si) process. Scheduled for mass production in November, ...
Tags: Toshiba, GaN-on-Si LEDs
New 1W GaN-on-Si LEDs break the 100 lm/W level in warm white with Toshiba stating that volume production will begin in November 2013. Toshiba Electronics Europe has announced a second-generation of the company's high-power ...
Tags: Toshiba, Silicon-Based LEDs
Nanoelectronics research centre imec of Belgium and Veeco Instruments Inc. (Nasdaq:VECO) are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. Barun ...
Nanoelectronics research center Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. “The ...
Azzurro has announced both production and lab milestones in wavelength variation using its GaN-on-Si LED template wafers and Air Water is working on a GaN-on-SiC-on-Si architecture with a new Aixtron MOCVD reactor. While the LED industry ...
Tags: LED Substrate Strategies, Lighting
German semiconductor manufacturer, Azzurro LED Technologies, announced during a talk at ICNS-10 that the company’s technology has reached the capability of achieving “1 bin” GaN-on-Si LED wafers. While showing production ...
Tags: GaN-on-Si LED Wafer, Lighting
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA and Belgium's imec are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si)-based power ...
Tags: LED, Power Electronics, Electrical, Electronics
In a presentation at the 10th International Conference on Nitride Semiconductors (ICNS-10) in Washington DC, USA (26-28 August), AZZURRO LED Technologies of Dresden, Germany announced that it has demonstrated '1-bin' wavelength LED wafers. ...
Tags: Azzurro GaN-on-Si, LED, Electrical, Electronics
Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...
Tags: Barrier Diodes, Electrical, Electronics
The company made public today the foundation of its new LED business unit, called "Azzurro LED Technologies", dedicating more resources to migrate the LED industry to GaN-on-Si. The new business unit's strategy is to license Azzurro's ...
Tags: LED, Lights, Lighting, LED Industry
Following declines of 45% in 2011 and 30% in 2013, LED wafer fab equipment spending will rise 17% to nearly $1.2bn in 2014 as the LED industry is working through its over-capacity problems and will renew capital spending and capacity ...
Tags: LED Equipment, LED, Electrical, Electronics
Saelig Company is now distributing samples of Plessey Semiconductors' GaN-on-Silicon MAGIC PLW111010 PLCC-2 SMT white light LEDs. These LEDs are claimed to be the first commercially available solid state illuminators manufactured on 6" ...
Sub-watt LEDs in 3014 and 3030 packages target general illumination and are based on the gallium-nitride-on-silicon technology developed by Toshiba and Bridgelux. Toshiba has announced two mid-power white LED families that are being ...
Tags: LED, Electrical, Electronics, Lighting
Toshiba Corporation announced the launch of white LEDs fabricated with gallium nitride-on-silicon (GaN-on-Si) process. The LEDs are low power sub-watt type and ideal for indoor lighting applications, due to reduction of forward voltage ...
Tags: Toshiba, White LEDs