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GaN on Si HEMT
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MACM Samples 4th-Generation 100w GaN-on-Si Wideband Transistor
Sep 15, 2015M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has announced that the MAGX-100027-100C0P, a wideband ...
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IQE Delivered The First 200mm Gallium Nitride-on-Silicon Wafers
Apr 2, 2014Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has delivered the first 200mm (8") gallium nitride-on-silicon wafers (GaN-on-Si) into the Singapore-MIT Alliance for Research and Technology Center's Low Energy Electronic ...
Tags: IQE GaN-on-Si III-V-on-silicon CMOS, Electrical, Electronics
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Japan Has Released The MB51T008A
Jul 15, 2013Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V. Features of the MB51T008A include: (1) ...
Tags: Power Device, Electrical
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IEMN Developed a GaN on Silicon High-Electron-Mobility Transistor
Apr 17, 2013Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD