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GaN power electronics
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Beryllium Doping of Gallium Nitride Shown to Offer Promise for Higher Efficiency in Power Electronics
Nov 15, 2017Working with scientists in Texas and Warsaw, researchers at Finland’s Aalto University have made a breakthrough in revising methods largely discarded 15 years ago (‘Amphoteric Be in GaN: Experimental Evidence for Switching ...
Tags: GaN Power electronics
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Navitas Launches First GaN Power ICs
Mar 21, 2016Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...
Tags: GaN, Power electronics
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Building Components for GaN Power Switches
Dec 18, 2015A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...
Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting
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Cambridge Electronics Launches GaN Transistors and Power Electronic Circuits
Aug 10, 2015Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...
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Cambridge University Chooses Veeco's Propel MOCVD System
Apr 21, 2015Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
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Epitaxial Deposition and Process Equipment Maker Veeco Instruments Inc of Plainview
Nov 21, 2014Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has introduced the Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which incorporates single-wafer ...
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GaN-on-Sapphire Is The Existing Mainstream Technology for LED Manufacturing
Mar 24, 2014Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED
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Soraa Has Been Awarded Several Million Dollars in Funding
Nov 19, 2013Soraa, the world leader in the development of GaN on GaN™ LED technology, announced that it has been awarded several million dollars in funding by U.S. Department of Energy’s Advanced Research Projects Agency - Energy (ARPA-E) ...
Tags: Soraa, GaN Substrates
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European Program Aimed at Developing a Cost-Effective and Reliable Technology
May 21, 2013LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
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Device Market Is Expected to Reach $12.6m by The End of 2012
Jul 13, 2012The Gallium Nitride (GaN) semiconductor device market is expected to reach $12.6m by the end of 2012, and the phenomenal growth rate of 60-80% year-on-year is expected to continue in subsequent years, according to the report ‘Gallium ...
Tags: Raw material, GaN
