For third-quarter 2014, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported record revenue of $272.1m, up 18% on $230.8m last quarter and up 8% on $250.8m a year ago. This ...
RF Micro Devices Inc of Greensboro, NC, USA has unveiled 11 new amplifiers, of which six are gallium nitride (GaN)-based products to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1. RFMD is ...
Tags: RFMD, 3.1 Cable Networking, Electronics
Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and provides gallium nitride (GaN)-based power conversion devices and modules for power supplies and adapters, motor drives, solar inverters and electric vehicles, is ...
Tags: Transphorm, Partner, Electrical
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has obtained a sole worldwide license to Furukawa Electric Co Ltd's extensive gallium nitride (GaN) power device ...
Tags: Transphorm GaN-on-Si GaN HEMT, power conversion devices, power modules
A government and industry team led by engineers from the US Air Force Research Laboratory’s Materials and Manufacturing Directorate (AFRL/RX) has completed a program to assess, improve, refine and validate a domestic source of supply ...
Tags: Electrical, Electronics
Soraa Chief Technology Officer Mike Krames recently ressponded to LED Magazine article's claims that the company's GanN-on-GaN MR16 emits large quantities of UV rays. Below is Krames blog entry on the company website: With the ...
Tags: UV Rays, GanN-on-GaN MR16
TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced the release of new gallium nitride (GaN) transistors that offer what is claimed to be superior gain, thermal management and efficiency for commercial and defense RF amplifier ...
Tags: TriQuint, Optical Modulator
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has provided an update on its aluminum ...
Tags: Kyma Technologies, Electronics
Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V. Features of the MB51T008A include: (1) ...
Tags: Power Device, Electrical
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has announced the commercial availability ...
Tags: Electrical, Kyma Technologies
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA says that RF-Lambda of San Diego, CA, USA, which makes and distributes RF components for analog wireless networks in North America, ...
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched a new website resource focused exclusively on gallium nitride (GaN). Several Richardson RFPD suppliers are driving innovation in the development of GaN ...
Tags: Richardson RFPD, Gallium Nitride, Microsemi
Transphorm raises$35m in Series-E financing LED by Japan's INCJ Transphorm Inc of Goleta,near Santa Barbara,CA,USA(which designs and delivers power conversion devices and modules)has announced a$35m Series E financing round led by ...
Tags: Transphorm, GaN, HEMTs
Global and China Power Device Industry Report, 2011-2012underlines: 1. power device; 2. global and China power device market; 3. power device industry; 4. IGBT, SiC and GaN market and industry outlook; 5. 18 power device players. ...
Tags: Power Device Industry Report, Power Device, power device market
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA,is showcasing twelve new products at European Microwave Week in Amsterdam next week(29-31 October).These include new packaged ...