The companies today jointly confirmed achieving GaN-on-Si based LEDs utilizing Epistar's high-brightness LED structures and AZZURRO's patented technology for 150 mm GaN-on-Si. The successful completion of the joined project confirmed the ...
Prototype LEDs fabricated from GaN-based layers grown on 150-mm-diameter silicon substrates are similar in performance to standard production devices grown on sapphire. Osram Opto Semiconductors has reported a set of R&D results from LEDs ...
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