Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Hosted by Stephen Doughty (the Member of Parliament for the Cardiff South and Penarth constituency), an event in the UK Houses of Parliament in Westminster, London, has formally launched the Compound Semiconductor Centre (CSC), formed at ...
Tags: IQE, compound semiconductor
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has announced the appointment of Dr Wyn Meredith as director of the Compound Semiconductor Centre (CSC), the new joint venture between IQE plc and Cardiff University to be ...
Tags: IQE, Compound Semiconductor
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
For first-half 2015, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has reported unaudited results in line with expectations and its July trading update. Revenue was £53.2m, down 11% on £60m in second-half ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has established a joint venture with Cardiff University to lead the development and commercialization of compound semiconductor technologies in Europe. IQE says that ...
Tags: electics, IQE, semiconductor
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that during first-quarter 2015 it received multiple new long-term purchase orders worth up to $3m for its antimonide substrate materials. The purchase orders are from ...
Tags: Infrared Products, LEDs
At SPIE Defense, Security and Sensing Technologies conference (DSS 2015) in Baltimore, MD, USA (21-23 April), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK is presenting a series of three invited papers on recent key ...
Tags: DSS 2015, GaSb substrates
The UK Government's Universities Minister Greg Clark MP has unveiled a £17.3m funding award that will underpin the Compound Semiconductor Research Foundation - the first of its kind in the UK, with potential to become one of the ...
Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
In an unaudited trading update for 2014, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that it expects full-year revenue to be about £112m (down 11.7% on £126.8m in 2013, but in line with expectations). ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has concluded the renegotiation of a long-term supply contract with an existing tier-1 customer for the supply of wafer products used in wireless applications. The new ...
Tags: wireless applications, long-term customer relationship, Electrical
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has received a new purchase order for indium phosphide (InP) materials worth $3.25m from a leading global substrate manufacturer. Produced by IQE’s Wafer Technology ...
Tags: Wafer Technology, Electrical