The imec research center in Belgium has integrated high-mobility indium gallium arsenide (InGaAs) channels into three-dimensional (3D) vertical NAND charge-trap flash memory structures. The research was reported at the International ...
Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
Sofradir of Palaiseau near Paris, France, which makes cooled infrared (IR) detectors based on mercury cadmium telluride (MCT/HgCdTe), indium antimonide (InSb), quantum-well infrared photodetector (QWIP) and indium gallium arsenide (InGaAs) ...
Tags: IR Detectors, infrared detector
At the 2015 Paris Air Show in France, UTC Aerospace Systems of Charlotte, NC, USA (a unit of United Technologies Corp of Hartford, CT) has introduced the Sensors Unlimited 320CSX, the latest in its line of MicroSWIR short-wave infrared ...
Tags: video cameras, Sensors
KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM
Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...
k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has reported revenue for its patented kSA BandiT wafer and film temperature monitoring ...
Tags: k-Space, Electronic Materials, Electrical
In booth 616 at the SPIE Photonics West 2015 event in San Francisco's Moscone Center (7-12 February), Marktech Optoelectronics of Latham, NY, USA, whose capabilities span wafer growth through finished packaging and custom solutions, is to ...
Tags: photodetectors, Electrical
McGill University in Canada claims to have created the first electrically injected rolled-up semiconductor tube laser [M. H. T. Dastjerdi et al, Appl. Phys. Lett., vol106, p021114, 2015]. Although rolled-up heterostructure lasers have been ...
Tags: optical pumping, tube lasers, Electrical
Researchers at Japan's NTT Device Technology Laboratories have used silicon (Si) doping to achieve p-type conduction in gallium arsenide antimony (GaAsSb) produced with metal-organic chemical vapor deposition (MOCVD) on indium phosphide ...
Northwestern University’s Center for Quantum Devices in USA has developed a monolithic room-temperature terahertz (THz) source based on quantum cascade lasers (QCLs) [Q. Y. Lu et al, Appl. Phys. Lett., vol105, p201102, 2014]. The ...
AUREA Technology of Besancon, France has launched its newly designed SPD_NIR_OEM_120MHz fast NIR single-photon-counting OEM module, which is claimed to be the most compact and fastest near-infrared [900-1700nm] single-photon-detection ...
Tags: single-photon-detection module, quantum technology, Electrical
Incorporating the latest technology to achieve high sensitivity, high resolution and an ultra-low stray light level, Shimadzu’s new UV-3600 Plus UV-VIS-NIR spectrophotometer offers scientists an opportunity to provide high-performance ...
Tags: stray light, Spectrophotometer