Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
ETH Zürich and Philips Technologie GmbH have developed 981nm-wavelength passively mode-locked electrically pumped vertical-external-cavity surface-emitting lasers (EP-VECSELs) with “the shortest pulses (2.5ps), highest average ...
Tags: EP-VECSELs InGaAs GaAs
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
Lund University has developed multi-gate (MuG) III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) with a cut-off frequency of 210GHz and a maximum oscillation frequency of 250GHz, “the highest of any reported ...
Tags: effect transistors, fins, plasma, Electrical&Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: Low-Power Tunneling Transistor, Electrical, Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: IQE, Electrical, Electronics
By using a unique silicon fin replacement process, Imec of Leuven, Belgium has demonstrated what it claims are the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers. The nanoelectronics ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
Sofradir of Chatenay-Malabry, near Paris, France, which makes infrared (IR) detectors based on mercury cadmium telluride (MCT/HgCdTe), indium antimonide (InSb), quantum-well infrared photodetector (QWIP) and indium gallium arsenide (InGaAs) ...
Tags: Electrical, Electronics
Sofradir of Chatenay-Malabry, which makes cooled infrared (IR) detectors based on mercury cadmium telluride (MCT/HgCdTe), indium antimonide (InSb), quantum-well infrared photodetector (QWIP) and indium gallium arsenide (InGaAs) technology, ...
Tags: Electrical, Electronics
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications, has announced that Ryo Nakao from NTT Photonics Laboratories (NTT) is using ...
Tags: Electrical, Electronics
Researchers based in the USA have used a double-heterostructuring based on order-disorder properties of aluminium indium phosphide (AlInP) to produce 'amber-green' light-emitting diodes (LEDs) [Theresa M. Christian et al, J. Appl. Phys., ...
Tags: LEDs, Electrical, Electronics
The UK's University of Manchester has used band engineering on indium phosphide (InP) to create indium gallium arsenide (InGaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) with reduced gate current leakage and high breakdown ...
Tags: Barriers
Japan's Sharp Corp has used a concentrator triple-junction III-V compound semiconductor photovoltaic cell to achieve a solar energy conversion efficiency of 44.4%, exceeding the record of 43.5% for concentrating conversion efficiency set in ...
Tags: Electrical, Electronics
OPEL Technologies Inc of Toronto, Ontario, Canada – which develops III-V semiconductor devices and processes through US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA – says it has achieved Milestone 6 ...
Tags: Electrical, Electronics